Properties of Si-Doped GaN Layers Grown by HVPE

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 433-437

  Fomin, A V ^a,b   Nikolaev, A E ^a,b   Nikitina, I P ^a   Zubrilov, A S ^a,b   Mynbaeva, M G ^a,b   Kuznetsov, N I ^a,b   Kovarsky, A P ^a   Ber, B Ja ^a   Tsvetkov, D V ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b Crystal Growth Research Center   (Russian Federation)

^c TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344415805     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<433::AID-PSSA433>3.0.CO;2-T     Document Type: Article

References (15)

1. YU. V. MELNIK, I. P. NIKITINA, A. E. NIKOLAEV, and V. A. DMITRIEV, Diam. Relat. Mater. 6, 1532 (1997).
2. R. MOLNAR, R. AGGARVAL, Z. LIAU, E. BROWN, I. MELNGAILIS, W. GOTZ, T. ROMANO, and M. JOHNSON, Mater. Res. Soc. Symp. Proc. 395, 189 (1996).
3. YU. V. MELNIK, A. E, S. STEPANOV, I. P. NIKITINA, K. VASSILEVSKI, A. ANKUDINOV, YU. MUSIKHIN, and V. A. DMITRIEV, Mater. Sci. Forum 264-268, 1121 (1998).
4. YU. V. MELNIK et al., MRS Internet J. Nitride Semicond. Res. 2, 39 (1997).
5. A. S. ZUBRILOV, YU. V. MELNIK, A. E. NIKOLAEV, M. A. JACOBSON, D. K. NELSON, and V. A. DMITRIEV, Semiconductors 33(10), 1067 (1999).
6. A. E. NIKOLAEV et al., Mater. Res. Soc. Symp. Proc. 482, 251 (1998).
7. YU. V. MELNIK et al., Mater. Res. Soc. Symp. Proc. 482, 245 (1998).
8. S. NAKAMURA, T. MYKAI, and M. SHENON, J. Appl. Phys. 31, 2883 (1992).
9. YU. V. MELNIK et al., Inst. Phys. Conf. Ser. 142, 863 (1996).
10. M. G. MYNBAEVA et al., Electrochem. Solid-State Lett. 2, 404 (1999).
11. E. R. GLASER et. al., Phys. Rev. B 51, 13326 (1995).
12. J. NEUGEBAUER and C. G. VAN DE WALLE, Appl. Phys.Lett. 69, 503 (1996).
13. E. F. SHUBERT, I. D. GOEPFEL, and W. GRISHBERG, Appl. Phys. Lett. 71, 921 (1997).
14. G. JACOB, M. BOULOV, and M. FURTADO, J. Cryst. Growth 42, 136 (1977).
15. J. I. PANKOVE and J. A. HUTCHBY, J. Appl. Phys. 47 (1978).