메뉴 건너뛰기




Volumn 310, Issue 17, 2008, Pages 3911-3916

Excellent crystallinity of truly bulk ammonothermal GaN

Author keywords

A1. High crystallinity; A1. X ray diffraction (or High resolution X ray diffraction); A2. Ammonothermal crystal growth; A2. Growth from solutions; B1. Gallium nitride (or Nitrides)

Indexed keywords

CRYSTALLOGRAPHY; CRYSTALS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NITRIDES; POWDERS; SEMICONDUCTING GALLIUM;

EID: 49449115063     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.036     Document Type: Article
Times cited : (318)

References (24)
  • 20
    • 49449101805 scopus 로고    scopus 로고
    • Polish Patent Application No. P-350375 filed on 26 October 2001.
    • Polish Patent Application No. P-350375 filed on 26 October 2001.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.