|
Volumn 310, Issue 17, 2008, Pages 3911-3916
|
Excellent crystallinity of truly bulk ammonothermal GaN
|
Author keywords
A1. High crystallinity; A1. X ray diffraction (or High resolution X ray diffraction); A2. Ammonothermal crystal growth; A2. Growth from solutions; B1. Gallium nitride (or Nitrides)
|
Indexed keywords
CRYSTALLOGRAPHY;
CRYSTALS;
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
GALLIUM NITRIDE;
NITRIDES;
POWDERS;
SEMICONDUCTING GALLIUM;
A1. HIGH CRYSTALLINITY;
A1. X-RAY DIFFRACTION (OR HIGH RESOLUTION X-RAY DIFFRACTION);
A2. AMMONOTHERMAL CRYSTAL GROWTH;
A2. GROWTH FROM SOLUTIONS;
AMMONOTHERMAL;
B1. GALLIUM NITRIDE (OR NITRIDES);
CRYSTALLINITY;
LOW-DISLOCATION-DENSITY;
STRUCTURAL PARAMETERS;
DISLOCATIONS (CRYSTALS);
|
EID: 49449115063
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.06.036 Document Type: Article |
Times cited : (318)
|
References (24)
|