Transport growth of GaN crystals by the ammonothermal technique using various nutrients

Journal of Crystal Growth

Volumn 291, Issue 2, 2006, Pages 455-460

  Wang, Buguo ^a   Callahan, Michael J ^b  

^a SOLID STATE SCIENTIFIC CORPORATION   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. Dissolution crystallization model; A2. Nutrient transport; A2. The ammonothermal technique; B1. Gallium containing intermediates (gallium containing ternary amide or imide); B1. GaN; B2. Phase relations

Indexed keywords

ALKALINITY; AMMONIA; CRYSTAL GROWTH; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INTERMETALLICS; SOLUTIONS; SUBSTRATES; THERMAL EFFECTS;

AMMONOBASIC SOLUTIONS; DISSOLUTION-CRYSTALLIZATION MODEL; NUTRIENT TRANSPORT; PHASE RELATIONS; TERNARY AMIDES; TERNARY IMIDE; THE AMMONOTHERMAL TECHNIQUE;

GALLIUM NITRIDE;

EID: 33646920842     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.035     Document Type: Article

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