High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN

Applied Physics Letters

Volumn 75, Issue 2, 1999, Pages 247-249

  Parish, G ^a   Keller, S ^a   Kozodoy, P ^a   Ibbetson, J P ^a   Marchand, H ^a   Fini, P T ^a   Fleischer, S B ^a   DenBaars, S P ^a   Mishra, U K ^a   Tarsa, E J ^b  

^a University of California at Santa Barbara   (United States)

^b Widegap Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SOLAR-BLIND ULTRAVIOLET PHOTODIODES;

ULTRAVIOLET DETECTORS;

EID: 0032606622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124337     Document Type: Article

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