Characterisation of GaN crystals and epilayers grown from a solution at room pressure

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2040-2043

  Meissner, E ^a   Birkmann, B ^a   Hussy, S ^a   Sun, G ^a   Friedrich, J ^a   Mueller, G ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CATHODOLUMINESCENCE; CRYSTAL GROWTH; ENERGY DISPERSIVE SPECTROSCOPY; PHOTOLUMINESCENCE; QUARTZ; SINGLE CRYSTALS; X RAY DIFFRACTION;

HORIZONTAL REACTOR; NITROGEN SOURCE; OPTIMUM PARAMETER SET; PROCESS TEMPERATURE;

GALLIUM NITRIDE;

EID: 27344445594     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461473     Document Type: Conference Paper

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