Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 607-610

  Senawiratne, J ^a,b   Li, Y ^a,b   Zhu, M ^a,b   Xia, Y ^a,b   Zhao, W ^a,b   Detchprohm, T ^a,b   Chatterjee, A ^a   Plawsky, J L ^a   Wetzel, C ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

Author keywords

Bulk GaN; GaInN GaN; GaN LED; Junction temperature; Raman; Thermal resistance

Indexed keywords

JUNCTION TEMPERATURE;

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT RESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 42249109830     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0370-7     Document Type: Conference Paper

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