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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 24-27, 2005, Pages

Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia

(7) Hashimoto, Tadao a Fujito, Kenji a Feng, W U a Haskell, Benjamin A a Fini, Paul T a Speck, James S a Nakamura, Shuji a

a Santa Barbara (United States)

Author keywords

Ammonothermal growth; Bulk GaN; Dislocations; Seeded growth; Supercritical ammonia

Indexed keywords

AMMONIA; CHARACTERIZATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GROWTH (MATERIALS); INTERFACES (MATERIALS); MICROSTRUCTURE; SINGLE CRYSTALS; SUPERCRITICAL FLUIDS;

AMMONOTHERMAL GROWTH; BULK GAN; SEEDED GROWTH; SUPERCRITICAL AMMONIA; THREADING DISLOCATION DENSITY;

THICK FILMS;

EID: 31844436978 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L797 Document Type: Article

Times cited : (23)

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