Electroluminescence efficiency of (1 0 1̄ 0)-oriented InGaN-based light-emitting diodes at low temperature

Journal of Physics D: Applied Physics

Volumn 41, Issue 8, 2008, Pages

  Masui, Hisashi ^a   Kroemer, Herbert ^a   Schmidt, Mathew C ^a   Kim, Kwang Choong ^a,b   Fellows, Natalie N ^a   Nakamura, Shuji ^a   DenBaars, Steven P ^a  

^a University of California   (United States)

^b Seoul Opto Device Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; INDIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; POLARIZATION;

ELECTRIC POLARIZATION FIELDS; HOLE DEPLETION; SQUARE ROOT RELATIONSHIP;

LIGHT EMITTING DIODES;

EID: 42549112950     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/8/082001     Document Type: Article

References (18)

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