Fabrication and characterization of native non-polar GaN substrates

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3953-3956

  Hanser, D ^a   Liu, L ^a   Preble, E A ^a   Udwary, K ^a   Paskova, T ^a   Evans, K R ^a  

^a KYMA TECHNOLOGIES INC   (United States)

Author keywords

A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; GALLIUM NITRIDE; OPTICAL DESIGN; POWDERS; SEMICONDUCTING GALLIUM; SUBSTRATES; SULFUR COMPOUNDS; VAPOR PHASE EPITAXY;

A-PLANE; A2. GROWTH FROM VAPOR; A2. SINGLE-CRYSTAL GROWTH; B1. NITRIDES; BULK GAN; DISLOCATION DENSITIES; GAN SUBSTRATES; HYDRIDE VAPOR PHASE EPITAXY; M-PLANE; NON-POLAR; NON-POLAR GAN; RMS ROUGHNESS; SECOND GROUP; STRUCTURAL CHARACTERISTICS; TWO TYPES; V-SHAPE;

GALLIUM ALLOYS;

EID: 49449113236     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.029     Document Type: Article

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