Thermodynamic analysis of hydride vapor phase epitaxy of GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 A, 1998, Pages 762-765

  Koukitu, Akinori ^a   Hama, Shin Ichi ^a   Taki, Tetsuya ^a   Seki, Hisashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Effect of hydrogen; GaN; Hydride VPE; Thermodynamics

Indexed keywords

HYDROGEN; SEMICONDUCTOR GROWTH; THERMODYNAMICS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032026009     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.762     Document Type: Article

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