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Volumn 91, Issue 25, 2007, Pages

Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (112-2) GaN substrate

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OPTICAL ANISOTROPY; OPTICAL PUMPING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STIMULATED EMISSION; SUBSTRATES;

PHOTOPUMPED CONDITIONS; STRUCTURE GROWN; THRESHOLD PUMPING POWER; VALENCE BAND CALCULATIONS;

SEMICONDUCTOR LASERS;

EID: 37549015970 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2799876 Document Type: Article

Times cited : (42)

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