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Volumn 1-5, Issue , 2011, Pages 493-542

Colloidal and Self-Assembled Quantum Dots for Optical Gain

Author keywords

Carrier recombination; Carrier relaxation; Epitaxial growth; Exciton; Gain; Laser; Light amplification; Nanocrystal; Quantum dot

Indexed keywords


EID: 85015357628     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-0-12-374396-1.00038-6     Document Type: Chapter
Times cited : (9)

References (233)
  • 1
    • 33847446049 scopus 로고
    • Stimulated optical radiation in ruby
    • Maiman T.H. Stimulated optical radiation in ruby. Nature 1960, 187:493-494.
    • (1960) Nature , vol.187 , pp. 493-494
    • Maiman, T.H.1
  • 3
    • 36849140385 scopus 로고
    • Coherent (visible) light emission from Ga(As1-xPx) junctions
    • Holonyak N., Bevacqua S. Coherent (visible) light emission from Ga(As1-xPx) junctions. Applied Physics Letters 1962, 1:82-83.
    • (1962) Applied Physics Letters , vol.1 , pp. 82-83
    • Holonyak, N.1    Bevacqua, S.2
  • 4
    • 21544475375 scopus 로고
    • Multidimensional quantum well laser and temperature-dependence of its threshold current
    • Arakawa Y., Sakaki H. Multidimensional quantum well laser and temperature-dependence of its threshold current. Applied Physics Letters 1982, 40:939-941.
    • (1982) Applied Physics Letters , vol.40 , pp. 939-941
    • Arakawa, Y.1    Sakaki, H.2
  • 6
    • 0024699760 scopus 로고
    • Spectral characteristics of linewidth enhancement factor-α of multidimensional quantum wells
    • Miyake Y., Asada M. Spectral characteristics of linewidth enhancement factor-α of multidimensional quantum wells. Japanese Journal of Applied Physics 1989, 1(28):1280-1281.
    • (1989) Japanese Journal of Applied Physics , vol.1 , Issue.28 , pp. 1280-1281
    • Miyake, Y.1    Asada, M.2
  • 8
    • 0033353146 scopus 로고    scopus 로고
    • Quantum dot lasers: Recent progress in theoretical understanding and demonstration of high-output-power operation
    • Grundmann M., Heinrichsdorff F., Ribbat C., Mao M., Bimberg D. Quantum dot lasers: Recent progress in theoretical understanding and demonstration of high-output-power operation. Applied Physics B: Lasers and Optics 1999, 69:413-416.
    • (1999) Applied Physics B: Lasers and Optics , vol.69 , pp. 413-416
    • Grundmann, M.1    Heinrichsdorff, F.2    Ribbat, C.3    Mao, M.4    Bimberg, D.5
  • 9
    • 22944438437 scopus 로고    scopus 로고
    • Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon
    • Mi Z., Bhattacharya R., Yang J., Pipe K. Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon. Electronics Letters 2005, 41:742-744.
    • (2005) Electronics Letters , vol.41 , pp. 742-744
    • Mi, Z.1    Bhattacharya, R.2    Yang, J.3    Pipe, K.4
  • 10
    • 36248970647 scopus 로고    scopus 로고
    • High-performance In0.5Ga0.5As/GaAs quantum-dot lasers on silicon with multiple-layer quantum-dot dislocation filters
    • Yang J., Bhattacharya P., Mi Z. High-performance In0.5Ga0.5As/GaAs quantum-dot lasers on silicon with multiple-layer quantum-dot dislocation filters. IEEE Transactions on Electron Devices 2007, 54:2849-2855.
    • (2007) IEEE Transactions on Electron Devices , vol.54 , pp. 2849-2855
    • Yang, J.1    Bhattacharya, P.2    Mi, Z.3
  • 11
    • 11044225644 scopus 로고    scopus 로고
    • The role of Auger recombination in the temperature-dependent output characteristics (T-0=infinity) of p-doped 1.3μm quantum dot lasers
    • Fathpour S., Mi Z., Bhattacharya P., et al. The role of Auger recombination in the temperature-dependent output characteristics (T-0=infinity) of p-doped 1.3μm quantum dot lasers. Applied Physics Letters 2004, 85:5164-5166.
    • (2004) Applied Physics Letters , vol.85 , pp. 5164-5166
    • Fathpour, S.1    Mi, Z.2    Bhattacharya, P.3
  • 13
  • 14
    • 0030217418 scopus 로고    scopus 로고
    • Perspectives on the physical chemistry of semiconductor nanocrystals
    • Alivisatos A.P. Perspectives on the physical chemistry of semiconductor nanocrystals. Journal of Physical Chemistry 1996, 100:13226-13239.
    • (1996) Journal of Physical Chemistry , vol.100 , pp. 13226-13239
    • Alivisatos, A.P.1
  • 15
    • 0034921439 scopus 로고    scopus 로고
    • Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots
    • Nozik A.J. Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots. Annual Review of Physical Chemistry 2001, 52:193-231.
    • (2001) Annual Review of Physical Chemistry , vol.52 , pp. 193-231
    • Nozik, A.J.1
  • 16
    • 0027567665 scopus 로고
    • Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems
    • Yoffe A.D. Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems. Advances in Physics 1993, 42:173-262.
    • (1993) Advances in Physics , vol.42 , pp. 173-262
    • Yoffe, A.D.1
  • 17
    • 0030084093 scopus 로고    scopus 로고
    • Semiconductor clusters, nanocrystals, and quantum dots
    • Alivisatos A.P. Semiconductor clusters, nanocrystals, and quantum dots. Science 1996, 271:933-937.
    • (1996) Science , vol.271 , pp. 933-937
    • Alivisatos, A.P.1
  • 18
    • 0000939999 scopus 로고
    • Synthesis and characterization of nearly monodisperse CdE (E=sulfur, selenium, tellurium) semiconductor nanocrystallites
    • Murray C.B., Norris D.J., Bawendi M.G. Synthesis and characterization of nearly monodisperse CdE (E=sulfur, selenium, tellurium) semiconductor nanocrystallites. Journal of the American Chemical Society 1993, 115:8706-8715.
    • (1993) Journal of the American Chemical Society , vol.115 , pp. 8706-8715
    • Murray, C.B.1    Norris, D.J.2    Bawendi, M.G.3
  • 19
    • 0033693570 scopus 로고    scopus 로고
    • Synthesis and characterization of monodisperse nanocrystals and close-packed nanocrystal assemblies
    • Murray C.B., Kagan C.R., Bawendi M.G. Synthesis and characterization of monodisperse nanocrystals and close-packed nanocrystal assemblies. Annual Review of Materials Science 2000, 30:545-610.
    • (2000) Annual Review of Materials Science , vol.30 , pp. 545-610
    • Murray, C.B.1    Kagan, C.R.2    Bawendi, M.G.3
  • 22
    • 0035835074 scopus 로고    scopus 로고
    • Formation of high-quality CdTe, CdSe, and CdS nanocrystals using CdO as precursor
    • Peng Z.A., Peng X. Formation of high-quality CdTe, CdSe, and CdS nanocrystals using CdO as precursor. Journal of the American Chemical Society 2001, 123:183-184.
    • (2001) Journal of the American Chemical Society , vol.123 , pp. 183-184
    • Peng, Z.A.1    Peng, X.2
  • 23
    • 0000535511 scopus 로고    scopus 로고
    • Alternative routes toward high quality CdSe nanocrystals
    • Qu L., Peng Z.A., Peng X. Alternative routes toward high quality CdSe nanocrystals. Nano Letters 2001, 1:333-337.
    • (2001) Nano Letters , vol.1 , pp. 333-337
    • Qu, L.1    Peng, Z.A.2    Peng, X.3
  • 25
    • 0029679140 scopus 로고    scopus 로고
    • Synthesis and characterization of strongly luminescing ZnS-capped CdSe nanocrystals
    • Hines M.A., Guyot-Sionnest P. Synthesis and characterization of strongly luminescing ZnS-capped CdSe nanocrystals. Journal of Physical Chemistry 1996, 100:468-471.
    • (1996) Journal of Physical Chemistry , vol.100 , pp. 468-471
    • Hines, M.A.1    Guyot-Sionnest, P.2
  • 26
    • 0031270076 scopus 로고    scopus 로고
    • (CdSe)ZnS core-shell quantum dots: Synthesis and optical and structural characterization of a size series of highly luminescent materials
    • Dabbousi B.O., Rodriguez-Viejo J., Mikulec F.V., et al. (CdSe)ZnS core-shell quantum dots: Synthesis and optical and structural characterization of a size series of highly luminescent materials. Journal of Physical Chemistry B 1997, 101:9463-9475.
    • (1997) Journal of Physical Chemistry B , vol.101 , pp. 9463-9475
    • Dabbousi, B.O.1    Rodriguez-Viejo, J.2    Mikulec, F.V.3
  • 27
    • 0034594990 scopus 로고    scopus 로고
    • Shape control of CdSe nanocrystals
    • Peng X., Manna U., Yang W., et al. Shape control of CdSe nanocrystals. Nature 2000, 404:59-61.
    • (2000) Nature , vol.404 , pp. 59-61
    • Peng, X.1    Manna, U.2    Yang, W.3
  • 28
    • 0035875033 scopus 로고    scopus 로고
    • Linearly polarized emission from colloidal semiconductor quantum rods
    • Hu J., Li L., Yang W., Manna L., Wang L., Alivisatos A.P. Linearly polarized emission from colloidal semiconductor quantum rods. Science 2001, 292:2060-2063.
    • (2001) Science , vol.292 , pp. 2060-2063
    • Hu, J.1    Li, L.2    Yang, W.3    Manna, L.4    Wang, L.5    Alivisatos, A.P.6
  • 30
    • 0037418383 scopus 로고    scopus 로고
    • Mechanisms for the shape-control and shape-evolution of colloidal semiconductor nanocrystals
    • Peng X. Mechanisms for the shape-control and shape-evolution of colloidal semiconductor nanocrystals. Advanced Materials 2003, 15:459-463.
    • (2003) Advanced Materials , vol.15 , pp. 459-463
    • Peng, X.1
  • 31
    • 2442669079 scopus 로고    scopus 로고
    • Small is different: Shape-, size-, and composition-dependent properties of some colloidal semiconductor nanocrystals
    • El-Sayed M.A. Small is different: Shape-, size-, and composition-dependent properties of some colloidal semiconductor nanocrystals. Accounts of Chemical Research 2004, 37:326-333.
    • (2004) Accounts of Chemical Research , vol.37 , pp. 326-333
    • El-Sayed, M.A.1
  • 32
    • 3142545233 scopus 로고    scopus 로고
    • Colloidal nanocrystal heterostructures with linear and branched topology
    • Milliron D.J., Hughes S.M., Cui Y., et al. Colloidal nanocrystal heterostructures with linear and branched topology. Nature 2004, 430:190-195.
    • (2004) Nature , vol.430 , pp. 190-195
    • Milliron, D.J.1    Hughes, S.M.2    Cui, Y.3
  • 34
    • 34548719877 scopus 로고    scopus 로고
    • Nanorod heterostructures showing photoinduced charge separation
    • Kumar S., Jones M., Lo S.S., Scholes G.D. Nanorod heterostructures showing photoinduced charge separation. Small 2007, 3:1633-1639.
    • (2007) Small , vol.3 , pp. 1633-1639
    • Kumar, S.1    Jones, M.2    Lo, S.S.3    Scholes, G.D.4
  • 35
    • 36249000148 scopus 로고    scopus 로고
    • Seeded growth of highly luminescent CdSe/CdS nanoheterostructures with rod and tetrapod morphologies
    • Talapin D.V., Nelson J.H., Shevchenko E.V., Aloni S., Sadtler B., Alivisatos A.P. Seeded growth of highly luminescent CdSe/CdS nanoheterostructures with rod and tetrapod morphologies. Nano Letters 2007, 7:2951-2959.
    • (2007) Nano Letters , vol.7 , pp. 2951-2959
    • Talapin, D.V.1    Nelson, J.H.2    Shevchenko, E.V.3    Aloni, S.4    Sadtler, B.5    Alivisatos, A.P.6
  • 36
    • 23744469689 scopus 로고    scopus 로고
    • Coupled and decoupled dual quantum systems in one semiconductor nanocrystal
    • Battaglia D., Blackman B., Peng X. Coupled and decoupled dual quantum systems in one semiconductor nanocrystal. Journal of the American Chemical Society 2005, 127:10889-10897.
    • (2005) Journal of the American Chemical Society , vol.127 , pp. 10889-10897
    • Battaglia, D.1    Blackman, B.2    Peng, X.3
  • 38
    • 0001553962 scopus 로고
    • Structure in the lowest absorption feature of CdSe quantum dots
    • Norris D.J., Bawendi M.G. Structure in the lowest absorption feature of CdSe quantum dots. Journal of Chemical Physics 1995, 103:5260-5268.
    • (1995) Journal of Chemical Physics , vol.103 , pp. 5260-5268
    • Norris, D.J.1    Bawendi, M.G.2
  • 39
    • 0000915740 scopus 로고    scopus 로고
    • Measurement and assignment of the size-dependent optical spectrum in CdSe quantum dots
    • Norris D.J., Bawendi M.G. Measurement and assignment of the size-dependent optical spectrum in CdSe quantum dots. Physical Review B 1996, 53:16338-16346.
    • (1996) Physical Review B , vol.53 , pp. 16338-16346
    • Norris, D.J.1    Bawendi, M.G.2
  • 40
    • 0033677249 scopus 로고    scopus 로고
    • The electronic structure of semiconductor nanocrystals
    • Efros A.L., Rosen M. The electronic structure of semiconductor nanocrystals. Annual Review of Materials Science 2000, 30:475-521.
    • (2000) Annual Review of Materials Science , vol.30 , pp. 475-521
    • Efros, A.L.1    Rosen, M.2
  • 41
  • 42
    • 67649221400 scopus 로고    scopus 로고
    • Experimental tests of effective mass and atomistic approaches to quantum dot electronic structure: Ordering of electronic states
    • 243116 243113.
    • Sewall S.L., Cooney R.R., Kambhampati P. Experimental tests of effective mass and atomistic approaches to quantum dot electronic structure: Ordering of electronic states. Applied Physics Letters 2009, 94. 243116 243113.
    • (2009) Applied Physics Letters , vol.94
    • Sewall, S.L.1    Cooney, R.R.2    Kambhampati, P.3
  • 43
    • 34249982947 scopus 로고    scopus 로고
    • Spectral and dynamical properties of multiexcitons in semiconductor nanocrystals
    • Klimov V.I. Spectral and dynamical properties of multiexcitons in semiconductor nanocrystals. Annual Review of Physical Chemistry 2007, 58:635-673.
    • (2007) Annual Review of Physical Chemistry , vol.58 , pp. 635-673
    • Klimov, V.I.1
  • 45
    • 0000390756 scopus 로고    scopus 로고
    • Applicability of the k.p method to the electronic structure of quantum dots
    • Fu H., Wang L.-W., Zunger A. Applicability of the k.p method to the electronic structure of quantum dots. Physical Review B 1998, 57:9971-9987.
    • (1998) Physical Review B , vol.57 , pp. 9971-9987
    • Fu, H.1    Wang, L.-W.2    Zunger, A.3
  • 46
    • 0000686679 scopus 로고    scopus 로고
    • Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states
    • Efros A.L., Rosen M., Kuno M., Nirmal M., Norris D.J., Bawendi M. Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states. Physical Review B 1996, 54:4843-4856.
    • (1996) Physical Review B , vol.54 , pp. 4843-4856
    • Efros, A.L.1    Rosen, M.2    Kuno, M.3    Nirmal, M.4    Norris, D.J.5    Bawendi, M.6
  • 47
    • 0000943655 scopus 로고    scopus 로고
    • Size dependence of exciton fine structure in CdSe quantum dots
    • Norris D.J., Efros A.L., Rosen M., Bawendi M.G. Size dependence of exciton fine structure in CdSe quantum dots. Physical Review B 1996, 53:16347-16354.
    • (1996) Physical Review B , vol.53 , pp. 16347-16354
    • Norris, D.J.1    Efros, A.L.2    Rosen, M.3    Bawendi, M.G.4
  • 48
    • 0031550473 scopus 로고    scopus 로고
    • Direct pseudopotential calculation of exciton coulomb and exchange energies in semiconductor quantum dots
    • Franceschetti A., Zunger A. Direct pseudopotential calculation of exciton coulomb and exchange energies in semiconductor quantum dots. Physical Review Letters 1997, 78:915-918.
    • (1997) Physical Review Letters , vol.78 , pp. 915-918
    • Franceschetti, A.1    Zunger, A.2
  • 49
    • 0001684142 scopus 로고    scopus 로고
    • Comparison of the k.p and the direct diagonalization approaches for describing the electronic structure of quantum dots
    • Fu H., Wang L.-W., Zunger A. Comparison of the k.p and the direct diagonalization approaches for describing the electronic structure of quantum dots. Applied Physics Letters 1997, 71:3433-3435.
    • (1997) Applied Physics Letters , vol.71 , pp. 3433-3435
    • Fu, H.1    Wang, L.-W.2    Zunger, A.3
  • 52
    • 27744465938 scopus 로고    scopus 로고
    • Dynamics within the exciton fine structure of colloidal CdSe quantum dots
    • Huxter V.M., Kovalevskij V., Scholes G.D. Dynamics within the exciton fine structure of colloidal CdSe quantum dots. Journal of Physical Chemistry B 2005, 109:20060-20063.
    • (2005) Journal of Physical Chemistry B , vol.109 , pp. 20060-20063
    • Huxter, V.M.1    Kovalevskij, V.2    Scholes, G.D.3
  • 53
    • 33748324753 scopus 로고    scopus 로고
    • Nanocrystal shape and the mechanism of exciton spin relaxation
    • Scholes G.D., Kim J., Wong C.Y., et al. Nanocrystal shape and the mechanism of exciton spin relaxation. Nano Letters 2006, 6:1765-1771.
    • (2006) Nano Letters , vol.6 , pp. 1765-1771
    • Scholes, G.D.1    Kim, J.2    Wong, C.Y.3
  • 54
    • 33646888003 scopus 로고    scopus 로고
    • Exciton spin relaxation in quantum dots measured using ultrafast transient polarization grating spectroscopy
    • 195325/195321-195325/195314
    • Scholes G.D., Kim J., Wong C.Y. Exciton spin relaxation in quantum dots measured using ultrafast transient polarization grating spectroscopy. Physical Review B 2006, 73. 195325/195321-195325/195314.
    • (2006) Physical Review B , vol.73
    • Scholes, G.D.1    Kim, J.2    Wong, C.Y.3
  • 56
    • 0034227989 scopus 로고    scopus 로고
    • Optical nonlinearities and ultrafast carrier dynamics in semiconductor nanocrystals
    • Klimov V.I. Optical nonlinearities and ultrafast carrier dynamics in semiconductor nanocrystals. Journal of Physical Chemistry B 2000, 104:6112-6123.
    • (2000) Journal of Physical Chemistry B , vol.104 , pp. 6112-6123
    • Klimov, V.I.1
  • 57
    • 33748809508 scopus 로고    scopus 로고
    • Mechanisms for photogeneration and recombination of multiexcitons in semiconductor nanocrystals: Implications for lasing and solar energy conversion
    • Klimov V.I. Mechanisms for photogeneration and recombination of multiexcitons in semiconductor nanocrystals: Implications for lasing and solar energy conversion. Journal of Physical Chemistry B 2006, 110:16827-16845.
    • (2006) Journal of Physical Chemistry B , vol.110 , pp. 16827-16845
    • Klimov, V.I.1
  • 62
    • 34547853592 scopus 로고    scopus 로고
    • Intraband relaxation in CdSe nanocrystals and the strong influence of the surface ligands
    • 074709/074701-074709/074707.
    • Guyot-Sionnest P., Wehrenberg B., Yu D. Intraband relaxation in CdSe nanocrystals and the strong influence of the surface ligands. Journal of Chemical Physics 2005, 123. 074709/074701-074709/074707.
    • (2005) Journal of Chemical Physics , vol.123
    • Guyot-Sionnest, P.1    Wehrenberg, B.2    Yu, D.3
  • 63
    • 55849149786 scopus 로고    scopus 로고
    • Slow electron cooling in colloidal quantum dots
    • Pandey A., Guyot-Sionnest P. Slow electron cooling in colloidal quantum dots. Science 2008, 322:929-932.
    • (2008) Science , vol.322 , pp. 929-932
    • Pandey, A.1    Guyot-Sionnest, P.2
  • 65
    • 2342525757 scopus 로고    scopus 로고
    • Multielectron ionization of CdSe quantum dots in intense femtosecond ultraviolet light
    • 127406/127401-127406/127404.
    • Son D.H., Wittenberg J.S., Alivisatos A.P. Multielectron ionization of CdSe quantum dots in intense femtosecond ultraviolet light. Physical Review Letters 2004, 92. 127406/127401-127406/127404.
    • (2004) Physical Review Letters , vol.92
    • Son, D.H.1    Wittenberg, J.S.2    Alivisatos, A.P.3
  • 67
    • 33748809508 scopus 로고    scopus 로고
    • Mechanisms for photogeneration and recombination of multiexcitons in semiconductor nanocrystals: Implications for lasing and solar energy conversion
    • Klimov V.I. Mechanisms for photogeneration and recombination of multiexcitons in semiconductor nanocrystals: Implications for lasing and solar energy conversion. Journal of Physical Chemistry B, Condensed Matter, Materials, Surfaces, Interfaces and Biophysical 2006, 110:16827-16845.
    • (2006) Journal of Physical Chemistry B, Condensed Matter, Materials, Surfaces, Interfaces and Biophysical , vol.110 , pp. 16827-16845
    • Klimov, V.I.1
  • 69
    • 67650320770 scopus 로고    scopus 로고
    • Universal size-dependent trend in Auger recombination in direct-gap and indirect-gap semiconductor nanocrystals
    • Robel I., Gresback R., Kortshagen U., Schaller R.D., Klimov V.I. Universal size-dependent trend in Auger recombination in direct-gap and indirect-gap semiconductor nanocrystals. Physical Review Letters 2009, 102:177404.
    • (2009) Physical Review Letters , vol.102 , pp. 177404
    • Robel, I.1    Gresback, R.2    Kortshagen, U.3    Schaller, R.D.4    Klimov, V.I.5
  • 70
    • 34648834993 scopus 로고    scopus 로고
    • Multicarrier recombination in colloidal quantum dots
    • 111104/111101-111104/111104.
    • Pandey A., Guyot-Sionnest P. Multicarrier recombination in colloidal quantum dots. Journal of Chemical Physics 2007, 127. 111104/111101-111104/111104.
    • (2007) Journal of Chemical Physics , vol.127
    • Pandey, A.1    Guyot-Sionnest, P.2
  • 71
    • 34249301393 scopus 로고    scopus 로고
    • Single-exciton optical gain in semiconductor nanocrystals
    • Klimov V.I., Ivanov S.A., Nanda J., et al. Single-exciton optical gain in semiconductor nanocrystals. Nature 2007, 447:441-446.
    • (2007) Nature , vol.447 , pp. 441-446
    • Klimov, V.I.1    Ivanov, S.A.2    Nanda, J.3
  • 72
    • 0034644601 scopus 로고    scopus 로고
    • Optical gain and stimulated emission in nanocrystal quantum dots
    • Klimov V.I., Mikhailovsky A.A., Xu S., et al. Optical gain and stimulated emission in nanocrystal quantum dots. Science 2000, 290:314-317.
    • (2000) Science , vol.290 , pp. 314-317
    • Klimov, V.I.1    Mikhailovsky, A.A.2    Xu, S.3
  • 73
    • 0001665946 scopus 로고    scopus 로고
    • Quantum dot lasers: Breakthrough in optoelectronics
    • Bimberg D., Grundmann M., Heinrichsdorff F., et al. Quantum dot lasers: Breakthrough in optoelectronics. Thin Solid Films 2000, 367:235-249.
    • (2000) Thin Solid Films , vol.367 , pp. 235-249
    • Bimberg, D.1    Grundmann, M.2    Heinrichsdorff, F.3
  • 79
    • 19544387410 scopus 로고    scopus 로고
    • Transient photoluminescence and simultaneous amplified spontaneous emission from multiexciton states in CdSe quantum dots
    • Caruge J.M., Chan Y., Sundar V., Eisler H.J., Bawendi M.G. Transient photoluminescence and simultaneous amplified spontaneous emission from multiexciton states in CdSe quantum dots. Physical Review B 2004, 70:085316.
    • (2004) Physical Review B , vol.70 , pp. 085316
    • Caruge, J.M.1    Chan, Y.2    Sundar, V.3    Eisler, H.J.4    Bawendi, M.G.5
  • 81
    • 0037766182 scopus 로고    scopus 로고
    • High-performance, quantum dot nanocomposites for nonlinear optical and optical gain applications
    • Petruska M.A., Malko A.V., Voyles P.M., Klimov V.I. High-performance, quantum dot nanocomposites for nonlinear optical and optical gain applications. Advanced Materials 2003, 15:610-613.
    • (2003) Advanced Materials , vol.15 , pp. 610-613
    • Petruska, M.A.1    Malko, A.V.2    Voyles, P.M.3    Klimov, V.I.4
  • 82
    • 63649149091 scopus 로고    scopus 로고
    • Gain control in semiconductor quantum dots via state-resolved optical pumping
    • Cooney R.R., Sewall S.L., Sagar D.M., Kambhampati P. Gain control in semiconductor quantum dots via state-resolved optical pumping. Physical Review Letters 2009, 102:127404.
    • (2009) Physical Review Letters , vol.102 , pp. 127404
    • Cooney, R.R.1    Sewall, S.L.2    Sagar, D.M.3    Kambhampati, P.4
  • 83
    • 72049093249 scopus 로고    scopus 로고
    • State-resolved manipulations of optical gain in semiconductor quantum dots: Size universality, gain tailoring, and surface effects
    • Cooney RR, Sewall SL, Sagar DM, and Kambhampati P State-resolved manipulations of optical gain in semiconductor quantum dots: Size universality, gain tailoring, and surface effects. Journal of Chemical Physics 131: 164706.
    • Journal of Chemical Physics , vol.131 , pp. 164706
    • Cooney, R.R.1    Sewall, S.L.2    Sagar, D.M.3    Kambhampati, P.4
  • 84
    • 0034670830 scopus 로고    scopus 로고
    • Optical transitions in charged CdSe quantum dots
    • Franceschetti A., Zunger A. Optical transitions in charged CdSe quantum dots. Physical Review B 2000, 62:R16287-R16290.
    • (2000) Physical Review B , vol.62 , pp. R16287-R16290
    • Franceschetti, A.1    Zunger, A.2
  • 85
    • 33745617195 scopus 로고    scopus 로고
    • Observation of optical gain in solutions of CdS quantum dots at room temperature in the blue region
    • 261108/261101-261108/261103.
    • Darugar Q., Qian W., El-Sayed M.A. Observation of optical gain in solutions of CdS quantum dots at room temperature in the blue region. Applied Physics Letters 2006, 88. 261108/261101-261108/261103.
    • (2006) Applied Physics Letters , vol.88
    • Darugar, Q.1    Qian, W.2    El-Sayed, M.A.3
  • 86
    • 12844281108 scopus 로고    scopus 로고
    • Room-temperature amplified spontaneous emission at 1300nm in solution-processed PbS quantum-dot films
    • Sukhovatkin V., Musikhin S., Gorelikov I., et al. Room-temperature amplified spontaneous emission at 1300nm in solution-processed PbS quantum-dot films. Optics Letters 2005, 30:171-173.
    • (2005) Optics Letters , vol.30 , pp. 171-173
    • Sukhovatkin, V.1    Musikhin, S.2    Gorelikov, I.3
  • 87
    • 0347541209 scopus 로고    scopus 로고
    • Tunable near-infrared optical gain and amplified spontaneous emission using pbse nanocrystals
    • Schaller R.D., Petruska M.A., Klimov V.I. Tunable near-infrared optical gain and amplified spontaneous emission using pbse nanocrystals. Journal of Physical Chemistry B 2003, 107:13765-13768.
    • (2003) Journal of Physical Chemistry B , vol.107 , pp. 13765-13768
    • Schaller, R.D.1    Petruska, M.A.2    Klimov, V.I.3
  • 88
    • 4043141659 scopus 로고    scopus 로고
    • Light amplification using inverted core/shell nanocrystals: Towards lasing in the single-exciton regime
    • Ivanov S.A., Nanda J., Piryatinski A., et al. Light amplification using inverted core/shell nanocrystals: Towards lasing in the single-exciton regime. Journal of Physical Chemistry B 2004, 108:10625-10630.
    • (2004) Journal of Physical Chemistry B , vol.108 , pp. 10625-10630
    • Ivanov, S.A.1    Nanda, J.2    Piryatinski, A.3
  • 89
    • 0036902459 scopus 로고    scopus 로고
    • Room temperature optical gain in CdSe nanorod solutions
    • Link S., El-Sayed M.A. Room temperature optical gain in CdSe nanorod solutions. Journal of Applied Physics 2002, 92:6799-6803.
    • (2002) Journal of Applied Physics , vol.92 , pp. 6799-6803
    • Link, S.1    El-Sayed, M.A.2
  • 90
  • 92
    • 35748976292 scopus 로고    scopus 로고
    • Light amplification in the single-exciton regime using exciton-exciton repulsion in type-II nanocrystal quantum dots
    • Nanda J., Ivanov S.A., Achermann M., et al. Light amplification in the single-exciton regime using exciton-exciton repulsion in type-II nanocrystal quantum dots. Journal of Physical Chemistry C 2007, 111:15382-15390.
    • (2007) Journal of Physical Chemistry C , vol.111 , pp. 15382-15390
    • Nanda, J.1    Ivanov, S.A.2    Achermann, M.3
  • 94
    • 33144476172 scopus 로고    scopus 로고
    • Direct observation of electron-to-hole energy transfer in CdSe quantum dots
    • 057408/057401-057408/057404.
    • Hendry E., Koeberg M., Wang F., et al. Direct observation of electron-to-hole energy transfer in CdSe quantum dots. Physical Review Letters 2006, 96. 057408/057401-057408/057404.
    • (2006) Physical Review Letters , vol.96
    • Hendry, E.1    Koeberg, M.2    Wang, F.3
  • 95
    • 0038297190 scopus 로고    scopus 로고
    • Multiple temperature regimes of radiative decay in CdSe nanocrystal quantum dots: Intrinsic limits to the dark-exciton lifetime
    • Crooker S.A., Barrick T., Hollingsworth J.A., Klimov V.I. Multiple temperature regimes of radiative decay in CdSe nanocrystal quantum dots: Intrinsic limits to the dark-exciton lifetime. Applied Physics Letters 2003, 82:2793-2795.
    • (2003) Applied Physics Letters , vol.82 , pp. 2793-2795
    • Crooker, S.A.1    Barrick, T.2    Hollingsworth, J.A.3    Klimov, V.I.4
  • 96
    • 0037816199 scopus 로고    scopus 로고
    • Experimental determination of the extinction coefficient of CdTe, CdSe, and CdS nanocrystals
    • Yu W.W., Qu L., Guo W., Peng X. Experimental determination of the extinction coefficient of CdTe, CdSe, and CdS nanocrystals. Chemistry of Materials 2003, 15:2854-2860.
    • (2003) Chemistry of Materials , vol.15 , pp. 2854-2860
    • Yu, W.W.1    Qu, L.2    Guo, W.3    Peng, X.4
  • 97
    • 33344475292 scopus 로고    scopus 로고
    • Spectral and dynamical characterization of multiexcitons in colloidal CdSe semiconductor quantum dots
    • Bonati C., Mohamed M.B., Tonti D., et al. Spectral and dynamical characterization of multiexcitons in colloidal CdSe semiconductor quantum dots. Physical Review B 2005, 71:205317.
    • (2005) Physical Review B , vol.71 , pp. 205317
    • Bonati, C.1    Mohamed, M.B.2    Tonti, D.3
  • 98
    • 41749086658 scopus 로고    scopus 로고
    • Multiexciton absorption and multiple exciton generation in CdSe quantum dots
    • Franceschetti A., Zhang Y. Multiexciton absorption and multiple exciton generation in CdSe quantum dots. Physical Review Letters 2008, 100:136804-136805.
    • (2008) Physical Review Letters , vol.100 , pp. 136804-136805
    • Franceschetti, A.1    Zhang, Y.2
  • 99
    • 84892667995 scopus 로고
    • Absorption and intensity-dependent photoluminescence measurements on cadmium selenide quantum dots: Assignment of the first electronic transitions
    • Ekimov A.I., Hache F., Schanne-Klein M.C., et al. Absorption and intensity-dependent photoluminescence measurements on cadmium selenide quantum dots: Assignment of the first electronic transitions. Journal of the Optical Society of America B 1993, 10:100-107.
    • (1993) Journal of the Optical Society of America B , vol.10 , pp. 100-107
    • Ekimov, A.I.1    Hache, F.2    Schanne-Klein, M.C.3
  • 100
    • 11644265183 scopus 로고    scopus 로고
    • High-energy excitonic transitions in CdSe quantum dots
    • Wang L.-W., Zunger A. High-energy excitonic transitions in CdSe quantum dots. Journal of Physical Chemistry B 1998, 102:6449-6454.
    • (1998) Journal of Physical Chemistry B , vol.102 , pp. 6449-6454
    • Wang, L.-W.1    Zunger, A.2
  • 101
    • 34249050240 scopus 로고    scopus 로고
    • Radiative recombination of triexcitons in CdSe colloidal quantum dots
    • Franceschetti A., Troparevsky M.C. Radiative recombination of triexcitons in CdSe colloidal quantum dots. Journal of Physical Chemistry C 2007, 111:6154-6157.
    • (2007) Journal of Physical Chemistry C , vol.111 , pp. 6154-6157
    • Franceschetti, A.1    Troparevsky, M.C.2
  • 102
    • 33751003554 scopus 로고    scopus 로고
    • Exciton-phonon coupling and disorder in the excited states of CdSe colloidal quantum dots
    • 184709/184701-184709/184716.
    • Salvador M.R., Graham M.W., Scholes G.D. Exciton-phonon coupling and disorder in the excited states of CdSe colloidal quantum dots. Journal of Chemical Physics 2006, 125. 184709/184701-184709/184716.
    • (2006) Journal of Chemical Physics , vol.125
    • Salvador, M.R.1    Graham, M.W.2    Scholes, G.D.3
  • 103
    • 0010180608 scopus 로고
    • Fabrication of small laterally patterned multiple quantum-wells
    • Scherer A., Craighead H. Fabrication of small laterally patterned multiple quantum-wells. Applied Physics Letters 1986, 49:1284-1286.
    • (1986) Applied Physics Letters , vol.49 , pp. 1284-1286
    • Scherer, A.1    Craighead, H.2
  • 105
    • 0000479698 scopus 로고
    • Observation of quantum confinement by strain gradients
    • Kash K., Vandergaag B., Mahoney D., et al. Observation of quantum confinement by strain gradients. Physical Review Letters 1991, 67:1326-1329.
    • (1991) Physical Review Letters , vol.67 , pp. 1326-1329
    • Kash, K.1    Vandergaag, B.2    Mahoney, D.3
  • 106
    • 0022109274 scopus 로고
    • Substitutional interstitial diffusion in semiconductors
    • Zahari M., Tuck B. Substitutional interstitial diffusion in semiconductors. Journal of Physics D: Applied Physics 1985, 18:1585-1595.
    • (1985) Journal of Physics D: Applied Physics , vol.18 , pp. 1585-1595
    • Zahari, M.1    Tuck, B.2
  • 107
    • 36549095443 scopus 로고
    • Intermixing of AlxGA1-xAs/GaAs superlattices by pulsed laser irradiation
    • Ralston J., Moretti A., Jain R., Chambers F. Intermixing of AlxGA1-xAs/GaAs superlattices by pulsed laser irradiation. Applied Physics Letters 1987, 50:1817-1819.
    • (1987) Applied Physics Letters , vol.50 , pp. 1817-1819
    • Ralston, J.1    Moretti, A.2    Jain, R.3    Chambers, F.4
  • 108
    • 33846389519 scopus 로고
    • Role of strain and growth-conditions on the growth front profile of InxGa1-xAs on GaAs during the pseudomorphic growth regime
    • Berger P., Chang K., Bhattacharya P., Singh J., Bajaj K. Role of strain and growth-conditions on the growth front profile of InxGa1-xAs on GaAs during the pseudomorphic growth regime. Applied Physics Letters 1988, 53:684-686.
    • (1988) Applied Physics Letters , vol.53 , pp. 684-686
    • Berger, P.1    Chang, K.2    Bhattacharya, P.3    Singh, J.4    Bajaj, K.5
  • 109
    • 0005985335 scopus 로고
    • Direct formation of quantum-sized dots from uniform coherent islands of ingaas on GaAs-surfaces
    • Leonard D., Krishnamurthy M., Reaves C., Denbaars S., Petroff P. Direct formation of quantum-sized dots from uniform coherent islands of ingaas on GaAs-surfaces. Applied Physics Letters 1993, 63:3203-3205.
    • (1993) Applied Physics Letters , vol.63 , pp. 3203-3205
    • Leonard, D.1    Krishnamurthy, M.2    Reaves, C.3    Denbaars, S.4    Petroff, P.5
  • 110
    • 21544446804 scopus 로고
    • Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)
    • Madhukar A., Xie Q., Chen P., Konkar A. Nature of strained InAs three-dimensional island formation and distribution on GaAs(100). Applied Physics Letters 1994, 64:2727-2729.
    • (1994) Applied Physics Letters , vol.64 , pp. 2727-2729
    • Madhukar, A.1    Xie, Q.2    Chen, P.3    Konkar, A.4
  • 111
    • 0000567687 scopus 로고    scopus 로고
    • Scanning transmission-electron microscopy study of InAs/GaAs quantum dots
    • Siverns P., Malik S., McPherson G., et al. Scanning transmission-electron microscopy study of InAs/GaAs quantum dots. Physical Review B 1998, 58:10127-10130.
    • (1998) Physical Review B , vol.58 , pp. 10127-10130
    • Siverns, P.1    Malik, S.2    McPherson, G.3
  • 112
    • 17944379630 scopus 로고    scopus 로고
    • Growth and characterization of single quantum dots emitting at 1300nm
    • Alloing B., Zinoni C., Zwiller V., et al. Growth and characterization of single quantum dots emitting at 1300nm. Applied Physics Letters 2005, 86:101908.
    • (2005) Applied Physics Letters , vol.86 , pp. 101908
    • Alloing, B.1    Zinoni, C.2    Zwiller, V.3
  • 113
    • 0035424150 scopus 로고    scopus 로고
    • Room-temperature operation of InAs quantum-dash lasers on InP (001)
    • Wang R., Stintz A., Varangis P., et al. Room-temperature operation of InAs quantum-dash lasers on InP (001). IEEE Photonics Technology Letters 2001, 13:767-769.
    • (2001) IEEE Photonics Technology Letters , vol.13 , pp. 767-769
    • Wang, R.1    Stintz, A.2    Varangis, P.3
  • 114
    • 33751361645 scopus 로고    scopus 로고
    • DC and dynamic characteristics of p-doped and tunnel injection 1.65μm InAs quantum-dash lasers grown on InP (001)
    • Mi Z., Bhattacharya P. DC and dynamic characteristics of p-doped and tunnel injection 1.65μm InAs quantum-dash lasers grown on InP (001). IEEE Journal of Quantum Electronics 2006, 42:1224-1232.
    • (2006) IEEE Journal of Quantum Electronics , vol.42 , pp. 1224-1232
    • Mi, Z.1    Bhattacharya, P.2
  • 115
    • 0035926880 scopus 로고    scopus 로고
    • Over 1.5μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
    • Tatebayashi J., Nishioka M., Arakawa Y. Over 1.5μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition. Applied Physics Letters 2001, 78:3469-3471.
    • (2001) Applied Physics Letters , vol.78 , pp. 3469-3471
    • Tatebayashi, J.1    Nishioka, M.2    Arakawa, Y.3
  • 116
    • 0037644893 scopus 로고    scopus 로고
    • Strain-engineered InAs/GaAs quantum dots for long-wavelength emission
    • Le Ru E., Howe P., Jones T., Murray R. Strain-engineered InAs/GaAs quantum dots for long-wavelength emission. Physical Review 2003, 67:165303.
    • (2003) Physical Review , vol.67 , pp. 165303
    • Le Ru, E.1    Howe, P.2    Jones, T.3    Murray, R.4
  • 117
    • 33947314128 scopus 로고    scopus 로고
    • Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAs
    • Mi Z., Yang J., Bhattacharya P. Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAs. Journal of Crystal Growth 2007, 301:923-926.
    • (2007) Journal of Crystal Growth , vol.301 , pp. 923-926
    • Mi, Z.1    Yang, J.2    Bhattacharya, P.3
  • 118
    • 33947320135 scopus 로고    scopus 로고
    • MBE-grown metamorphic lasers for applications at telecom wavelengths
    • Ledentsov N., Shchukin V., Kettler T., et al. MBE-grown metamorphic lasers for applications at telecom wavelengths. Journal of Crystal Growth 2007, 301:914-922.
    • (2007) Journal of Crystal Growth , vol.301 , pp. 914-922
    • Ledentsov, N.1    Shchukin, V.2    Kettler, T.3
  • 119
    • 33750018904 scopus 로고    scopus 로고
    • Growth and characteristics of ultralow threshold 1.45mum metamorphic InAs tunnel injection quantum dot lasers on GaAs
    • Mi Z., Bhattacharya P., Yang J. Growth and characteristics of ultralow threshold 1.45mum metamorphic InAs tunnel injection quantum dot lasers on GaAs. Applied Physics Letters 2006, 89:153109.
    • (2006) Applied Physics Letters , vol.89 , pp. 153109
    • Mi, Z.1    Bhattacharya, P.2    Yang, J.3
  • 120
    • 0005834097 scopus 로고
    • Vertically self-organized InAs quantum box islands on GaAs(100)
    • Xie Q., Madhukar A., Chen P., Kobayashi N. Vertically self-organized InAs quantum box islands on GaAs(100). Physical Review Letters 1995, 75:2542-2545.
    • (1995) Physical Review Letters , vol.75 , pp. 2542-2545
    • Xie, Q.1    Madhukar, A.2    Chen, P.3    Kobayashi, N.4
  • 121
    • 0005580628 scopus 로고    scopus 로고
    • Vertically aligned and electronically coupled growth induced InAs islands in GaAs
    • Solomon G.S., Trezza J.A., Marshall A.F., Harris J.S. Vertically aligned and electronically coupled growth induced InAs islands in GaAs. Physical Review Letters 1996, 76:952-955.
    • (1996) Physical Review Letters , vol.76 , pp. 952-955
    • Solomon, G.S.1    Trezza, J.A.2    Marshall, A.F.3    Harris, J.S.4
  • 122
    • 0001454216 scopus 로고    scopus 로고
    • Independent manipulation of density and size of stress-driven self-assembled quantum dots
    • Mukhametzhanov I., Heitz R., Zeng J., Chen P., Madhukar A. Independent manipulation of density and size of stress-driven self-assembled quantum dots. Applied Physics Letters 1998, 73:1841-1943.
    • (1998) Applied Physics Letters , vol.73 , pp. 1841-1943
    • Mukhametzhanov, I.1    Heitz, R.2    Zeng, J.3    Chen, P.4    Madhukar, A.5
  • 123
    • 0034187665 scopus 로고    scopus 로고
    • Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots
    • Krishna S., Sabarinathan J., Linder K., Bhattacharya P., Lita B., Goldman R. Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots. Journal of Vacuum Science and Technology B 2000, 18:1502-1506.
    • (2000) Journal of Vacuum Science and Technology B , vol.18 , pp. 1502-1506
    • Krishna, S.1    Sabarinathan, J.2    Linder, K.3    Bhattacharya, P.4    Lita, B.5    Goldman, R.6
  • 124
    • 23844549295 scopus 로고    scopus 로고
    • Molecular-beam epitaxial growth and characteristics of highly uniform InAs/GaAs quantum dot layers
    • Mi Z., Bhattacharya P. Molecular-beam epitaxial growth and characteristics of highly uniform InAs/GaAs quantum dot layers. Journal of Applied Physics 2005, 98:023510.
    • (2005) Journal of Applied Physics , vol.98 , pp. 023510
    • Mi, Z.1    Bhattacharya, P.2
  • 125
    • 48949104546 scopus 로고    scopus 로고
    • Pseudomorphic and metamorphic quantum dot heterostructures for long-wavelength lasers on GaAs and Si (invited paper)
    • Mi Z., Bhattacharya P. Pseudomorphic and metamorphic quantum dot heterostructures for long-wavelength lasers on GaAs and Si (invited paper). IEEE Journal of Selected Topics in Quantum Electronics 2008, 14:1171-1179.
    • (2008) IEEE Journal of Selected Topics in Quantum Electronics , vol.14 , pp. 1171-1179
    • Mi, Z.1    Bhattacharya, P.2
  • 126
    • 4344634808 scopus 로고    scopus 로고
    • Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
    • Liu H., Sellers I., Badcock T., et al. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Applied Physics Letters 2004, 85:704-706.
    • (2004) Applied Physics Letters , vol.85 , pp. 704-706
    • Liu, H.1    Sellers, I.2    Badcock, T.3
  • 127
    • 0036752762 scopus 로고    scopus 로고
    • The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
    • Sizov D., Maksimov M., Tsatsul'nikov A., et al. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix. Semiconductors 2002, 36:1020-1026.
    • (2002) Semiconductors , vol.36 , pp. 1020-1026
    • Sizov, D.1    Maksimov, M.2    Tsatsul'nikov, A.3
  • 128
    • 0001697803 scopus 로고    scopus 로고
    • Comparison of the k center dot p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots
    • Wang L., Williamson A., Zunger A., Jiang H., Singh J. Comparison of the k center dot p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots. Applied Physics Letters 2000, 76:339-341.
    • (2000) Applied Physics Letters , vol.76 , pp. 339-341
    • Wang, L.1    Williamson, A.2    Zunger, A.3    Jiang, H.4    Singh, J.5
  • 129
    • 0001328873 scopus 로고    scopus 로고
    • Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
    • Jiang H., Singh J. Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study. Physical Review B 1997, 56:4696-4701.
    • (1997) Physical Review B , vol.56 , pp. 4696-4701
    • Jiang, H.1    Singh, J.2
  • 130
    • 0032124118 scopus 로고    scopus 로고
    • Self-assembled semiconductor structures: Electronic and optoelectronic properties
    • Jiang H., Singh J. Self-assembled semiconductor structures: Electronic and optoelectronic properties. IEEE Journal of Quantum Electronics 1998, 34:1188-1196.
    • (1998) IEEE Journal of Quantum Electronics , vol.34 , pp. 1188-1196
    • Jiang, H.1    Singh, J.2
  • 131
    • 33751145890 scopus 로고
    • Intrinsic mechanism for the poor luminescence properties of quantum-box systems
    • Benisty H., Sotomayortorres C., Weisbuch C. Intrinsic mechanism for the poor luminescence properties of quantum-box systems. Physical Review B 1991, 44:10945-10948.
    • (1991) Physical Review B , vol.44 , pp. 10945-10948
    • Benisty, H.1    Sotomayortorres, C.2    Weisbuch, C.3
  • 132
    • 0000932058 scopus 로고
    • Phonon-scattering and energy relaxation in 2-dimensional, one-dimensional, and zero-dimensional electron gases
    • Bockelmann U., Bastard G. Phonon-scattering and energy relaxation in 2-dimensional, one-dimensional, and zero-dimensional electron gases. Physical Review B 1990, 42:8947-8951.
    • (1990) Physical Review B , vol.42 , pp. 8947-8951
    • Bockelmann, U.1    Bastard, G.2
  • 133
    • 0000175055 scopus 로고    scopus 로고
    • Phonon bottleneck in self-formed InxGa1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence
    • Mukai K., Ohtsuka N., Shoji H., Sugawara M. Phonon bottleneck in self-formed InxGa1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence. Physical Review B 1996, 54:R5243-R5246.
    • (1996) Physical Review B , vol.54 , pp. R5243-R5246
    • Mukai, K.1    Ohtsuka, N.2    Shoji, H.3    Sugawara, M.4
  • 134
    • 0035926607 scopus 로고    scopus 로고
    • Observation of phonon bottleneck in quantum dot electronic relaxation
    • Urayama J., Norris T., Singh J., Bhattacharya P. Observation of phonon bottleneck in quantum dot electronic relaxation. Physical Review Letters 2001, 86:4930-4933.
    • (2001) Physical Review Letters , vol.86 , pp. 4930-4933
    • Urayama, J.1    Norris, T.2    Singh, J.3    Bhattacharya, P.4
  • 135
    • 0001002852 scopus 로고
    • Electron relaxation in quantum dots by means of Auger processes
    • Bockelmann U., Egeler T. Electron relaxation in quantum dots by means of Auger processes. Physical Review B 1992, 46:15574-15577.
    • (1992) Physical Review B , vol.46 , pp. 15574-15577
    • Bockelmann, U.1    Egeler, T.2
  • 136
    • 0000556220 scopus 로고    scopus 로고
    • Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
    • Heitz R., Veit M., Ledentsov N., et al. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots. Physical Review B 1997, 56:10435-10445.
    • (1997) Physical Review B , vol.56 , pp. 10435-10445
    • Heitz, R.1    Veit, M.2    Ledentsov, N.3
  • 137
    • 0542451421 scopus 로고    scopus 로고
    • Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy
    • Sosnowski T., Norris T., Jiang H., Singh J., Kamath K., Bhattacharya P. Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy. Physical Review B 1998, 57:R9423-R9426.
    • (1998) Physical Review B , vol.57 , pp. R9423-R9426
    • Sosnowski, T.1    Norris, T.2    Jiang, H.3    Singh, J.4    Kamath, K.5    Bhattacharya, P.6
  • 138
    • 0000171146 scopus 로고    scopus 로고
    • Temperature dependence of carrier relaxation in strain-induced quantum dots
    • Brasken M., Lindberg M., Sopanen M., Lipsanen H., Tulkki J. Temperature dependence of carrier relaxation in strain-induced quantum dots. Physical Review B 1998, 58:R15993-R15996.
    • (1998) Physical Review B , vol.58 , pp. R15993-R15996
    • Brasken, M.1    Lindberg, M.2    Sopanen, M.3    Lipsanen, H.4    Tulkki, J.5
  • 139
    • 0032630959 scopus 로고    scopus 로고
    • In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
    • Bhattacharya P., Kamath K., Singh J., et al. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties. IEEE Transactions on Electron Devices 1999, 46:871-883.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 871-883
    • Bhattacharya, P.1    Kamath, K.2    Singh, J.3
  • 140
    • 0040374493 scopus 로고    scopus 로고
    • Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots
    • Ghosh S., Bhattacharya P., Stoner E., et al. Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots. Applied Physics Letters 2001, 79:722-724.
    • (2001) Applied Physics Letters , vol.79 , pp. 722-724
    • Ghosh, S.1    Bhattacharya, P.2    Stoner, E.3
  • 142
    • 0043173950 scopus 로고    scopus 로고
    • Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
    • Bhattacharya P., Ghosh S., Pradhan S., et al. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers. IEEE Journal of Quantum Electronics 2003, 39:952-962.
    • (2003) IEEE Journal of Quantum Electronics , vol.39 , pp. 952-962
    • Bhattacharya, P.1    Ghosh, S.2    Pradhan, S.3
  • 143
    • 0037164784 scopus 로고    scopus 로고
    • Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers
    • Matthews D., Summers H., Smowton P., Hopkinson M. Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers. Applied Physics Letters 2002, 81:4904-4906.
    • (2002) Applied Physics Letters , vol.81 , pp. 4904-4906
    • Matthews, D.1    Summers, H.2    Smowton, P.3    Hopkinson, M.4
  • 145
    • 79957929085 scopus 로고    scopus 로고
    • 1.3μm InAs quantum dot laser with T-o=161K from 0 to 80degreesC
    • Shchekin O., Deppe D. 1.3μm InAs quantum dot laser with T-o=161K from 0 to 80degreesC. Applied Physics Letters 2002, 80:3277-3279.
    • (2002) Applied Physics Letters , vol.80 , pp. 3277-3279
    • Shchekin, O.1    Deppe, D.2
  • 146
    • 79956020640 scopus 로고    scopus 로고
    • The role of p-type doping and the density of states on the modulation response of quantum dot lasers
    • Shchekin O., Deppe D. The role of p-type doping and the density of states on the modulation response of quantum dot lasers. Applied Physics Letters 2002, 80:2758-2760.
    • (2002) Applied Physics Letters , vol.80 , pp. 2758-2760
    • Shchekin, O.1    Deppe, D.2
  • 148
    • 0032121524 scopus 로고    scopus 로고
    • Enhanced modulation bandwidth (20GHz) of In0.4Ga0.6As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: Role of carrier relaxation and differential gain
    • Klotzkin D., Kamath K., Vineberg K., Bhattacharya P., Murty R., Laskar J. Enhanced modulation bandwidth (20GHz) of In0.4Ga0.6As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: Role of carrier relaxation and differential gain. IEEE Photonics Technology Letters 1998, 10:932-934.
    • (1998) IEEE Photonics Technology Letters , vol.10 , pp. 932-934
    • Klotzkin, D.1    Kamath, K.2    Vineberg, K.3    Bhattacharya, P.4    Murty, R.5    Laskar, J.6
  • 149
    • 0002449385 scopus 로고    scopus 로고
    • Quantum dimensionality, entropy, and the modulation response of quantum dot lasers
    • Deppe D., Huffaker D. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers. Applied Physics Letters 2000, 77:3325-3327.
    • (2000) Applied Physics Letters , vol.77 , pp. 3325-3327
    • Deppe, D.1    Huffaker, D.2
  • 150
    • 0032072095 scopus 로고    scopus 로고
    • Temperature dependence of the threshold current density of a quantum dot laser
    • Asryan L., Suris R. Temperature dependence of the threshold current density of a quantum dot laser. IEEE Journal of Quantum Electronics 1998, 34:841-850.
    • (1998) IEEE Journal of Quantum Electronics , vol.34 , pp. 841-850
    • Asryan, L.1    Suris, R.2
  • 151
    • 36549102536 scopus 로고
    • Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions
    • Vahala K., ZAH C. Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions. Applied Physics Letters 1988, 52:1945-1947.
    • (1988) Applied Physics Letters , vol.52 , pp. 1945-1947
    • Vahala, K.1    Zah, C.2
  • 152
    • 0037019212 scopus 로고    scopus 로고
    • High temperature performance of self-organised quantum dot laser with stacked p-doped active region
    • Shchekin O., Ahn J., Deppe D. High temperature performance of self-organised quantum dot laser with stacked p-doped active region. Electronics Letters 2002, 38:712-713.
    • (2002) Electronics Letters , vol.38 , pp. 712-713
    • Shchekin, O.1    Ahn, J.2    Deppe, D.3
  • 153
    • 27744519741 scopus 로고    scopus 로고
    • Small-signal modulation characteristics of p-doped 1.1 and 1.3μm quantum-dot lasers
    • Fathpour S., Mi Z., Bhattacharya P. Small-signal modulation characteristics of p-doped 1.1 and 1.3μm quantum-dot lasers. IEEE Photonics Technology Letters 2005, 17:2250-2252.
    • (2005) IEEE Photonics Technology Letters , vol.17 , pp. 2250-2252
    • Fathpour, S.1    Mi, Z.2    Bhattacharya, P.3
  • 154
    • 33947202693 scopus 로고    scopus 로고
    • Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers
    • Kim J., Chuang S. Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers. IEEE Journal of Quantum Electronics 2006, 42:942-952.
    • (2006) IEEE Journal of Quantum Electronics , vol.42 , pp. 942-952
    • Kim, J.1    Chuang, S.2
  • 155
    • 21044457521 scopus 로고    scopus 로고
    • Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers
    • Deppe D., Freisem S., Huang H., Lipson S. Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers. Journal of Physics D: Applied Physics 2005, 38:2121.
    • (2005) Journal of Physics D: Applied Physics , vol.38 , pp. 2121
    • Deppe, D.1    Freisem, S.2    Huang, H.3    Lipson, S.4
  • 156
    • 0030217389 scopus 로고    scopus 로고
    • Room temperature lasing from InGaAs quantum dots
    • Mirin R., Gossard A., Bowers J. Room temperature lasing from InGaAs quantum dots. Electronics Letters 1996, 32:1732-1734.
    • (1996) Electronics Letters , vol.32 , pp. 1732-1734
    • Mirin, R.1    Gossard, A.2    Bowers, J.3
  • 157
    • 27844532235 scopus 로고    scopus 로고
    • Carrier transport and recombination in p-doped and intrinsic 1.3mum InAs/GaAs quantum-dot lasers
    • Marko I., Masse N., Sweeney S., et al. Carrier transport and recombination in p-doped and intrinsic 1.3mum InAs/GaAs quantum-dot lasers. Applied Physics Letters 2005, 87:211114-211116.
    • (2005) Applied Physics Letters , vol.87 , pp. 211114-211116
    • Marko, I.1    Masse, N.2    Sweeney, S.3
  • 158
    • 17444401748 scopus 로고    scopus 로고
    • Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
    • Novikov I., Gordeev N., Karachinskii L., et al. Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers. Semiconductors 2005, 39:477-480.
    • (2005) Semiconductors , vol.39 , pp. 477-480
    • Novikov, I.1    Gordeev, N.2    Karachinskii, L.3
  • 160
    • 33847675814 scopus 로고    scopus 로고
    • Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55μm
    • Lelarge F., Dagens B., Renaudier J., et al. Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55μm. IEEE Journal of Selected Topics in Quantum Electronics 2007, 13:111-124.
    • (2007) IEEE Journal of Selected Topics in Quantum Electronics , vol.13 , pp. 111-124
    • Lelarge, F.1    Dagens, B.2    Renaudier, J.3
  • 161
    • 38049042221 scopus 로고    scopus 로고
    • The impact of p-doping on the static and dynamic properties of 1.5μm quantum dash lasers on InP
    • Hein S., von Hinten V., Hofling S., Forchel A. The impact of p-doping on the static and dynamic properties of 1.5μm quantum dash lasers on InP. Applied Physics Letters 2008, 92:011120.
    • (2008) Applied Physics Letters , vol.92 , pp. 011120
    • Hein, S.1    von Hinten, V.2    Hofling, S.3    Forchel, A.4
  • 162
    • 54949155499 scopus 로고    scopus 로고
    • Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels
    • Jin C.Y., Liu H.Y., Jiang Q., Hopkinson M., Wada O. Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels. Applied Physics Letters 2008, 93:161103.
    • (2008) Applied Physics Letters , vol.93 , pp. 161103
    • Jin, C.Y.1    Liu, H.Y.2    Jiang, Q.3    Hopkinson, M.4    Wada, O.5
  • 164
    • 34047199166 scopus 로고    scopus 로고
    • Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers
    • Kim J., Su H., Minin S., Chuang S. Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers. IEEE Photonics Technology Letters 2006, 18:1022-1024.
    • (2006) IEEE Photonics Technology Letters , vol.18 , pp. 1022-1024
    • Kim, J.1    Su, H.2    Minin, S.3    Chuang, S.4
  • 167
    • 0035397518 scopus 로고    scopus 로고
    • Tunneling-injection quantum-dot laser: Ultrahigh temperature stability
    • Asryan L., Luryi S. Tunneling-injection quantum-dot laser: Ultrahigh temperature stability. IEEE Journal of Quantum Electronics 2001, 37:905-910.
    • (2001) IEEE Journal of Quantum Electronics , vol.37 , pp. 905-910
    • Asryan, L.1    Luryi, S.2
  • 168
    • 79955987715 scopus 로고    scopus 로고
    • Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15GHz modulation bandwidth at room temperature
    • Bhattacharya P., Ghosh S. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15GHz modulation bandwidth at room temperature. Applied Physics Letters 2002, 80:3482-3484.
    • (2002) Applied Physics Letters , vol.80 , pp. 3482-3484
    • Bhattacharya, P.1    Ghosh, S.2
  • 170
    • 0028499029 scopus 로고
    • Low-threshold, large t-o injection-laser emission from (InGa)as quantum dots
    • Kirstaedter N., Ledentsov N., Grundmann M., et al. Low-threshold, large t-o injection-laser emission from (InGa)as quantum dots. Electronics Letters 1994, 30:1416-1417.
    • (1994) Electronics Letters , vol.30 , pp. 1416-1417
    • Kirstaedter, N.1    Ledentsov, N.2    Grundmann, M.3
  • 171
    • 0001580523 scopus 로고    scopus 로고
    • Red-emitting semiconductor quantum dot lasers
    • Fafard S., Hinzer K., Raymond S., et al. Red-emitting semiconductor quantum dot lasers. Science 1996, 274:1350-1353.
    • (1996) Science , vol.274 , pp. 1350-1353
    • Fafard, S.1    Hinzer, K.2    Raymond, S.3
  • 172
  • 173
    • 0030259955 scopus 로고    scopus 로고
    • Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
    • Shoji H., Nakata Y., Mukai K., et al. Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer. Electronics Letters 1996, 32:2023-2024.
    • (1996) Electronics Letters , vol.32 , pp. 2023-2024
    • Shoji, H.1    Nakata, Y.2    Mukai, K.3
  • 174
    • 22944461738 scopus 로고    scopus 로고
    • Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures
    • Kaiser W., Mathwig K., Deubert S., et al. Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures. Electronics Letters 2005, 41:808-810.
    • (2005) Electronics Letters , vol.41 , pp. 808-810
    • Kaiser, W.1    Mathwig, K.2    Deubert, S.3
  • 176
    • 0036641330 scopus 로고    scopus 로고
    • Quantum-dot vertical-cavity surface-emitting lasers
    • Bimberg D., Ledentsov N., Lott J. Quantum-dot vertical-cavity surface-emitting lasers. MRS Bulletin 2002, 27:531-537.
    • (2002) MRS Bulletin , vol.27 , pp. 531-537
    • Bimberg, D.1    Ledentsov, N.2    Lott, J.3
  • 177
    • 33845728799 scopus 로고    scopus 로고
    • Single-mode monolithic quantum-dot VCSEL in 1.3μm with sidemode suppression ratio over 30dB
    • Chang Y., Peng P., Tsai W., et al. Single-mode monolithic quantum-dot VCSEL in 1.3μm with sidemode suppression ratio over 30dB. IEEE Photonics Technology Letters 2006, 18:847-849.
    • (2006) IEEE Photonics Technology Letters , vol.18 , pp. 847-849
    • Chang, Y.1    Peng, P.2    Tsai, W.3
  • 178
    • 33747115059 scopus 로고    scopus 로고
    • Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy
    • Hopfer F., Kaiander I., Lochmann A., et al. Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy. Applied Physics Letters 2006, 89:101106.
    • (2006) Applied Physics Letters , vol.89 , pp. 101106
    • Hopfer, F.1    Kaiander, I.2    Lochmann, A.3
  • 179
    • 0031551233 scopus 로고    scopus 로고
    • Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity
    • Huffaker D., Graham L., Deppe D. Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity. Electronics Letters 1997, 33:1225-1226.
    • (1997) Electronics Letters , vol.33 , pp. 1225-1226
    • Huffaker, D.1    Graham, L.2    Deppe, D.3
  • 181
    • 33845764360 scopus 로고    scopus 로고
    • Electrically injected quantum-dot photonic crystal microcavity light-emitting arrays with air-bridge contacts
    • Chakravarty S., Bhattacharya P., Mi Z. Electrically injected quantum-dot photonic crystal microcavity light-emitting arrays with air-bridge contacts. IEEE Photonics Technology Letters 2006, 18:2665-2667.
    • (2006) IEEE Photonics Technology Letters , vol.18 , pp. 2665-2667
    • Chakravarty, S.1    Bhattacharya, P.2    Mi, Z.3
  • 182
    • 33645527561 scopus 로고    scopus 로고
    • Self-tuned quantum dot gain in photonic crystal lasers
    • Strauf S., Hennessy K., Rakher M.T., et al. Self-tuned quantum dot gain in photonic crystal lasers. Physical Review Letters 2006, 96:127404.
    • (2006) Physical Review Letters , vol.96 , pp. 127404
    • Strauf, S.1    Hennessy, K.2    Rakher, M.T.3
  • 183
    • 85010178997 scopus 로고    scopus 로고
    • Room temperature continuous-wave lasing in photonic crystal nanocavity
    • Nomura M., Iwamoto S., Watanabe K., et al. Room temperature continuous-wave lasing in photonic crystal nanocavity. Optics Express 2006, 14:6308-6315.
    • (2006) Optics Express , vol.14 , pp. 6308-6315
    • Nomura, M.1    Iwamoto, S.2    Watanabe, K.3
  • 184
    • 0001215952 scopus 로고    scopus 로고
    • Optically pumped InAs quantum dot microdisk lasers
    • Cao H., Xu J.Y., Xiang W.H., et al. Optically pumped InAs quantum dot microdisk lasers. Applied Physics Letters 2000, 76:3519-3521.
    • (2000) Applied Physics Letters , vol.76 , pp. 3519-3521
    • Cao, H.1    Xu, J.Y.2    Xiang, W.H.3
  • 185
    • 20844458575 scopus 로고    scopus 로고
    • Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots
    • Srinivasan K., Borselli M., Johnson T., et al. Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots. Applied Physics Letters 2005, 86.
    • (2005) Applied Physics Letters , pp. 86
    • Srinivasan, K.1    Borselli, M.2    Johnson, T.3
  • 188
    • 61349123214 scopus 로고    scopus 로고
    • Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes
    • Vicknesh S., Li F., Mi Z. Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes. Applied Physics Letters 2009, 94:81101.
    • (2009) Applied Physics Letters , vol.94 , pp. 81101
    • Vicknesh, S.1    Li, F.2    Mi, Z.3
  • 190
    • 0035263919 scopus 로고    scopus 로고
    • Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
    • Eliseev P., Li H., Liu G., et al. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 2001, 7:135-142.
    • (2001) IEEE Journal of Selected Topics in Quantum Electronics , vol.7 , pp. 135-142
    • Eliseev, P.1    Li, H.2    Liu, G.3
  • 191
    • 9144220371 scopus 로고    scopus 로고
    • 1.3μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
    • Sellers I., Liu H., Groom K., et al. 1.3μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. Electronics Letters 2004, 40:1412-1413.
    • (2004) Electronics Letters , vol.40 , pp. 1412-1413
    • Sellers, I.1    Liu, H.2    Groom, K.3
  • 192
  • 193
    • 14344267976 scopus 로고    scopus 로고
    • 3.9W CW power from sub-monolayer quantum dot diode laser
    • Zhukov A., Kovsh A., Mikhrin S., et al. 3.9W CW power from sub-monolayer quantum dot diode laser. Electronics Letters 1999, 35:1845-1847.
    • (1999) Electronics Letters , vol.35 , pp. 1845-1847
    • Zhukov, A.1    Kovsh, A.2    Mikhrin, S.3
  • 194
    • 0346306317 scopus 로고    scopus 로고
    • Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser
    • Kondratko P., Chuang S., Walter G., Chung T., Holonyak N. Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser. Applied Physics Letters 2003, 83:4818-4820.
    • (2003) Applied Physics Letters , vol.83 , pp. 4818-4820
    • Kondratko, P.1    Chuang, S.2    Walter, G.3    Chung, T.4    Holonyak, N.5
  • 195
    • 0000555829 scopus 로고    scopus 로고
    • Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots
    • Manz Y., Schmidt O., Eberl K. Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots. Applied Physics Letters 2000, 76:3343-3345.
    • (2000) Applied Physics Letters , vol.76 , pp. 3343-3345
    • Manz, Y.1    Schmidt, O.2    Eberl, K.3
  • 196
    • 1242264289 scopus 로고    scopus 로고
    • Visible spectrum (645nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
    • Walter G., Elkow J., Holonyak N., Heller R., Zhang X., Dupuis R. Visible spectrum (645nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells. Applied Physics Letters 2004, 84:666-668.
    • (2004) Applied Physics Letters , vol.84 , pp. 666-668
    • Walter, G.1    Elkow, J.2    Holonyak, N.3    Heller, R.4    Zhang, X.5    Dupuis, R.6
  • 197
    • 64349118416 scopus 로고    scopus 로고
    • Visible InGaN/GaN quantum-dot materials and devices
    • Grandjean N., Ilegems M. Visible InGaN/GaN quantum-dot materials and devices. Proceedings of the IEEE 2007, 95:1853-1865.
    • (2007) Proceedings of the IEEE , vol.95 , pp. 1853-1865
    • Grandjean, N.1    Ilegems, M.2
  • 198
    • 0000379506 scopus 로고    scopus 로고
    • Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
    • Tachibana K., Someya T., Arakawa Y., Werner R., Forchel A. Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser. Applied Physics Letters 1999, 75:2605-2607.
    • (1999) Applied Physics Letters , vol.75 , pp. 2605-2607
    • Tachibana, K.1    Someya, T.2    Arakawa, Y.3    Werner, R.4    Forchel, A.5
  • 200
    • 0036454472 scopus 로고    scopus 로고
    • Progress in self-assembled quantum dots for optoelectronic device application
    • Arakawa Y. Progress in self-assembled quantum dots for optoelectronic device application. IEICE Transactions on Electronics 2002, E85C:37-44.
    • (2002) IEICE Transactions on Electronics , vol.E85C , pp. 37-44
    • Arakawa, Y.1
  • 201
    • 1242308877 scopus 로고    scopus 로고
    • InGaN/GaN multi-quantum dot light-emitting diodes
    • Ji L., Su Y., Chang S., et al. InGaN/GaN multi-quantum dot light-emitting diodes. Journal of Crystal Growth 2004, 263:114-118.
    • (2004) Journal of Crystal Growth , vol.263 , pp. 114-118
    • Ji, L.1    Su, Y.2    Chang, S.3
  • 202
    • 1642306311 scopus 로고    scopus 로고
    • InGaN/GaN blue light-emitting diodes with self-assembled quantum dots
    • Su Y., Chang S., Ji L., et al. InGaN/GaN blue light-emitting diodes with self-assembled quantum dots. Semiconductor Science and Technology 2004, 19:389-392.
    • (2004) Semiconductor Science and Technology , vol.19 , pp. 389-392
    • Su, Y.1    Chang, S.2    Ji, L.3
  • 205
    • 0001423816 scopus 로고    scopus 로고
    • Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots
    • Hinzer K., Lapointe J., Feng Y., et al. Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots. Journal of Applied Physics 2000, 87:1496-1502.
    • (2000) Journal of Applied Physics , vol.87 , pp. 1496-1502
    • Hinzer, K.1    Lapointe, J.2    Feng, Y.3
  • 206
    • 79956056510 scopus 로고    scopus 로고
    • Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
    • Liu H., Sellers I., Airey R., et al. Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. Applied Physics Letters 2002, 80:3769-3771.
    • (2002) Applied Physics Letters , vol.80 , pp. 3769-3771
    • Liu, H.1    Sellers, I.2    Airey, R.3
  • 208
    • 0032689040 scopus 로고    scopus 로고
    • Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
    • Liu G., Stintz A., Li H., Malloy K., Lester L. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well. Electronics Letters 1999, 35:1163-1165.
    • (1999) Electronics Letters , vol.35 , pp. 1163-1165
    • Liu, G.1    Stintz, A.2    Li, H.3    Malloy, K.4    Lester, L.5
  • 209
    • 33750016868 scopus 로고    scopus 로고
    • Temperature dependence of threshold current in p-doped quantum dot lasers
    • Sandall I., Smowton P., Thomson J., et al. Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters 2006, 89:151118.
    • (2006) Applied Physics Letters , vol.89 , pp. 151118
    • Sandall, I.1    Smowton, P.2    Thomson, J.3
  • 210
    • 1442337627 scopus 로고    scopus 로고
    • High-frequency modulation characteristics of 1.3μm InGaAs quantum dot lasers
    • Kim S., Wang Y., Keever M., Harris J. High-frequency modulation characteristics of 1.3μm InGaAs quantum dot lasers. IEEE Photonics Technology Letters 2004, 16:377-379.
    • (2004) IEEE Photonics Technology Letters , vol.16 , pp. 377-379
    • Kim, S.1    Wang, Y.2    Keever, M.3    Harris, J.4
  • 211
    • 21044437832 scopus 로고    scopus 로고
    • Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: Temperature-insensitive 10 Gbs(-1) directly modulated lasers and 40Gbs(-1) signal-regenerative amplifiers
    • Sugawara M., Hatori N., Ishida M., et al. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: Temperature-insensitive 10 Gbs(-1) directly modulated lasers and 40Gbs(-1) signal-regenerative amplifiers. Journal of Physics D: Applied Physics 2005, 38:2126-2134.
    • (2005) Journal of Physics D: Applied Physics , vol.38 , pp. 2126-2134
    • Sugawara, M.1    Hatori, N.2    Ishida, M.3
  • 213
    • 0000972998 scopus 로고    scopus 로고
    • High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080nm
    • Liu H., Xu B., Wei Y., et al. High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080nm. Applied Physics Letters 2001, 79:2868-2870.
    • (2001) Applied Physics Letters , vol.79 , pp. 2868-2870
    • Liu, H.1    Xu, B.2    Wei, Y.3
  • 214
    • 10744231535 scopus 로고    scopus 로고
    • High-power single-mode 1.3μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures
    • Livshits D., Kovsh A., Zhukov A., et al. High-power single-mode 1.3μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures. Technical Physics Letters 2004, 30:9-11.
    • (2004) Technical Physics Letters , vol.30 , pp. 9-11
    • Livshits, D.1    Kovsh, A.2    Zhukov, A.3
  • 215
  • 216
    • 35349005779 scopus 로고    scopus 로고
    • Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57μm
    • Azouigui S., Kelleher B., Hegarty S., et al. Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57μm. Optics Express 2007, 15:14155-14162.
    • (2007) Optics Express , vol.15 , pp. 14155-14162
    • Azouigui, S.1    Kelleher, B.2    Hegarty, S.3
  • 217
    • 29144473029 scopus 로고    scopus 로고
    • Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5μm spectral region
    • Karachinsky L., Kettler T., Gordeev N., et al. Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5μm spectral region. Semiconductors 2005, 39:1415-1419.
    • (2005) Semiconductors , vol.39 , pp. 1415-1419
    • Karachinsky, L.1    Kettler, T.2    Gordeev, N.3
  • 218
    • 33746592561 scopus 로고    scopus 로고
    • Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate
    • Kettler T., Karachinsky L., Ledentsov N., et al. Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate. Applied Physics Letters 2006, 89:041113.
    • (2006) Applied Physics Letters , vol.89 , pp. 041113
    • Kettler, T.1    Karachinsky, L.2    Ledentsov, N.3
  • 219
    • 67449119732 scopus 로고    scopus 로고
    • High-performance quantum dot lasers and integrated optoelectronics on Si
    • Mi Z.T., Yang J., Bhattacharya P., Qin G.X., Ma Z.Q. High-performance quantum dot lasers and integrated optoelectronics on Si. Proceedings of the IEEE 2009, 97:1239-1249.
    • (2009) Proceedings of the IEEE , vol.97 , pp. 1239-1249
    • Mi, Z.T.1    Yang, J.2    Bhattacharya, P.3    Qin, G.X.4    Ma, Z.Q.5
  • 220
    • 0042513733 scopus 로고    scopus 로고
    • InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
    • Oliver R., Briggs G., Kappers M., et al. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters 2003, 83:755-757.
    • (2003) Applied Physics Letters , vol.83 , pp. 755-757
    • Oliver, R.1    Briggs, G.2    Kappers, M.3
  • 221
    • 0042513733 scopus 로고    scopus 로고
    • InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
    • Oliver R.A., Briggs G.A.D., Kappers M.J., et al. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters 2003, 83:755-757.
    • (2003) Applied Physics Letters , vol.83 , pp. 755-757
    • Oliver, R.A.1    Briggs, G.A.D.2    Kappers, M.J.3
  • 223
    • 79955992500 scopus 로고    scopus 로고
    • Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
    • Lin Y.S., Ma K.J., Hsu C., et al. Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells. Applied Physics Letters 2002, 80:2571-2573.
    • (2002) Applied Physics Letters , vol.80 , pp. 2571-2573
    • Lin, Y.S.1    Ma, K.J.2    Hsu, C.3
  • 224
    • 0001519426 scopus 로고    scopus 로고
    • Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
    • Tachibana K., Someya T., Arakawa Y. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Applied Physics Letters 1999, 74:383-385.
    • (1999) Applied Physics Letters , vol.74 , pp. 383-385
    • Tachibana, K.1    Someya, T.2    Arakawa, Y.3
  • 226
    • 0036531837 scopus 로고    scopus 로고
    • Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures
    • Leite J. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures. Microelectronics Journal 2002, 33:323-329.
    • (2002) Microelectronics Journal , vol.33 , pp. 323-329
    • Leite, J.1
  • 227
    • 79955997290 scopus 로고    scopus 로고
    • From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids
    • Malko A.V., Mikhailovsky A.A., Petruska M.A., et al. From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids. Applied Physics Letters 2002, 81:1303-1305.
    • (2002) Applied Physics Letters , vol.81 , pp. 1303-1305
    • Malko, A.V.1    Mikhailovsky, A.A.2    Petruska, M.A.3
  • 228
    • 17044432278 scopus 로고    scopus 로고
    • Blue semiconductor nanocrystal laser
    • 073102/073101-073102/073103.
    • Chan Y., Steckel J.S., Snee P.T., et al. Blue semiconductor nanocrystal laser. Applied Physics Letters 2005, 86. 073102/073101-073102/073103.
    • (2005) Applied Physics Letters , vol.86
    • Chan, Y.1    Steckel, J.S.2    Snee, P.T.3
  • 229
    • 0035827304 scopus 로고    scopus 로고
    • Room-temperature ultraviolet nanowire nanolasers
    • Huang M.H., Mao S., Feick H., et al. Room-temperature ultraviolet nanowire nanolasers. Science 2001, 292:1897-1899.
    • (2001) Science , vol.292 , pp. 1897-1899
    • Huang, M.H.1    Mao, S.2    Feick, H.3
  • 231
    • 66749153442 scopus 로고    scopus 로고
    • Non-blinking semiconductor nanocrystals
    • Wang X., Ren X., Kahen K., et al. Non-blinking semiconductor nanocrystals. Nature 2009, 459:686-689.
    • (2009) Nature , vol.459 , pp. 686-689
    • Wang, X.1    Ren, X.2    Kahen, K.3
  • 232
    • 1042276638 scopus 로고    scopus 로고
    • Multiexcitons confined within a subexcitonic volume: Spectroscopic and dynamical signatures of neutral and charged biexcitons in ultrasmall semiconductor nanocrystals
    • Achermann M., Hollingsworth J.A., Klimov V.I. Multiexcitons confined within a subexcitonic volume: Spectroscopic and dynamical signatures of neutral and charged biexcitons in ultrasmall semiconductor nanocrystals. Physical Review B 2003, 68:245302.
    • (2003) Physical Review B , vol.68 , pp. 245302
    • Achermann, M.1    Hollingsworth, J.A.2    Klimov, V.I.3
  • 233
    • 61449224878 scopus 로고    scopus 로고
    • Large blue shift of the biexciton state in tellurium doped CdSe colloidal quantum dots
    • Avidan A., Oron D. Large blue shift of the biexciton state in tellurium doped CdSe colloidal quantum dots. Nano Letters 2008, 8:2384-2387.
    • (2008) Nano Letters , vol.8 , pp. 2384-2387
    • Avidan, A.1    Oron, D.2


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