MBE-grown metamorphic lasers for applications at telecom wavelengths

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 914-922

  Ledentsov, N N ^a   Shchukin, V A ^a   Kettler, T ^a   Posilovic, K ^a   Bimberg, D ^a   Karachinsky, L Ya ^b   Gladyshev, A Yu ^b   Maximov, M V ^b   Novikov, I I ^b   Shernyakov, Yu M ^b   Zhukov, A E ^b   Ustinov, V M ^b   Kovsh, A R ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c NL Nanosemiconductor GmbH   (Germany)

Author keywords

A1. Metamorphic growth; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Nanomaterials; B3. Laser diodes

Indexed keywords

BUFFER LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL INTERCONNECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SOLAR CELLS;

CASCADED SOLAR CELLS; METAMORPHIC GROWTH; OPTICAL MIRROR DAMAGE; WAVELENGTH SHIFT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947320135     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.035     Document Type: Article

References (25)

1. Ledentsov N.N., Ustinov V.M., Egorov A.Yu., Zhukov A.E., Maximov M.V., Tabatadze I.G., and Kop'ev P.S. Semiconductors 28 (1994) 832
2. Krestnikov I., Livshits D., Mikhrin S., Kozhukhov A., Kovsh A., Ledentsov N., and Zhukov A. Electron. Lett. 41 24 (2005)
3. Ledentsov N.N., Kovsh A.R., Shchukin V.A., Mikhrin S.S., Krestnikov I.L., Kozhukhov A.V., Karachinsky L.Ya., Maximov M.V., Novikov I.I., Shernyakov Y.M., Soshnikov I.P., Zhukov A.E., Portnoi E.L., Ustinov V.M., Gerthsen D., Bhattacharya P., Zakharov N.F., Werner P., Hopfer F., Kuntz M., and Bimberg D. Proc. SPIE 5624 (2005) 335
4. N.N. Ledentsov, A.R. Kovsh, V.A. Shchukin, S.S. Mikhrin, I.L. Krestnikov, A.V. Kozhukhov, L.Ya. Karachinsky, M.V. Maximov, I.I. Novikov, Yu.M. Shernyakov, I.P. Soshnikov, A.E. Zhukov, Yu.G. Musikhin, V.M. Ustinov, N.D. Zakharov, P. Werner, T. Kettler, K. Posilovic, D. Bimberg, M. Hu, H. K. Nguyen, K. Song, C.-e. Zah, 1.3-1.5 μm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance, in: V. Carmen Mermelstein, D. David P. Bour (Eds.), Plane Semiconductor Lasers Proceedings of SPIE-Novel, vol. 6133, 2006, p. 61330S.
5. Laemmlin M., Fiol G., Meuer C., Kuntz M., Hopfer F., Kovsh A.R., Ledentsov N.N., and Bimberg D. Electron. Lett. 42 (2006) 697
6. See for a review, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Epitaxy of nanostructures, in: Springer Series on Nanoscience and Technology, 2003, Springer, Berlin, 450pp.
7. Goldstein L., Glas F., Marzin J.Y., Charasse M.N., and Leroux G. Appl. Phys. Lett. 47 (1985) 1099
8. Glas F., Guille C., Hénoc P., and Houzay F. In: Cullis A.G., and Augustus P.D. (Eds). Microscopy of Semiconducting Materials, Proceedings of the Institute of Physics Conference, 6-8 April 1987, Institute of Physics Conference Series Number 87 (1987), Oxford University 71
9. Tabuchi M., Noda S., and Sasaki A. In: Namba S., Hamaguchi C., and Ando T. (Eds). Science and Technology of Mesoscopic Structures (1992), Springer, Tokyo 379
10. Brandt O., Ilg M., and Ploog K. Microelectron. J. 26 (1995) 861
11. Ledentsov N.N., Grundmann M., Kirstaedter N., Schmidt O., Heitz R., Böhrer J., Bimberg D., Ustinov V.M., Shchukin V.A., Kop'ev P.S., Alferov Zh.I., Ruvimov S.S., Kosogov A.O., Werner P., Richter U., Gösele U., and Heydenreich J. Solid State Electron. 40 (1996) 785
12. Ledentsov N.N., Shchukin V.A., Bimberg D., Ustinov V.M., Cherkashin N.A., Musikhin Yu.G., Volovik B.V., Cirlin G.E., and Alferov Zh.I. Semicond. Sci. Technol. 16 (2001) 502
13. Ledentsov N.N., Maximov M.V., Bimberg D., Maka T., Sotomayor Torres C.M., Kochnev I.V., Krestnikov I.L., Lantratov V.M., Cherkashin N.A., Musikhin Yu.M., and Alferov Zh.I. Semicond. Sci. Technol. 15 (2000) 604
14. Sizov D.S., Maksimov M.V., Tsatsul'nikov A.F., Cherkashin N.A., Kryzhanovskaya N.V., Zhukov A.B., Maleev N.A., Mikhrin S.S., Vasil'ev A.P., Sellin R., Ustinov V.M., Ledentsov N.N., Bimberg D., and Alferov Zh.I. Semiconductors 36 (2002) 1020
15. Lenz A., Eisele H., Timm R., Becker S.K., Sellin R.L., Pohl U.W., Bimberg D., and Dähne M. Appl. Phys. Lett. 85 (2004) 3848
16. L.H. Li, M. Rossetti, A. Fiore, G. Patriarche, Electron. Lett. 42 (2006) paper 20060918.
17. Ledentsov N.N., Kovsh A.R., Zhukov A.E., Maleev N.A., Mikhrin S.S., Vasil'ev A.P., Semenova E.S., Maximov M.V., Shemyakov Y.M., Kryzhanovskaya N.V., Ustinov V.M., and Bimberg D. Electron. Lett. 39 (2003) 1126
18. N. Ledentsov, Semiconductor device and method of making same, United States Patent 6653166, 2003.
19. V. Shchukin, N. Ledentsov, Defect-free semiconductor templates for epitaxial growth and method of making same, United States Patent 6784074, 2004.
20. Ledentsov N.N., and Bimberg D. J. Crystal Growth 255 (2003) 68
21. Ribbat Ch., Sellin R.L., Kaiander I., Hopfer F., Ledentsov N.N., Bimberg D., Kovsh A.R., Ustinov V.M., Zhukov A.E., and Maximov M.V. Appl. Phys. Lett. 82 6 (2003) 952
22. Karachinsky L.Y., Kettler T., Gordeev N.Y., Novikov I.I., Maximov M.V., Shernyakov Yu.M., Kryzhanovskaya N.V., Zhukov A.E., Semenova E.S., Vasil'ev A.P., Ustinov V.M., Ledentsov N.N., Kovsh A.R., Shchukin V.A., Mikhrin S.S., Lochmann A., Schulz O., Reissmann L., and Bimberg D. Electron. Lett. 41 8 (2005) 478
23. Kettler T., Karachinsky L.Ya., Ledentsov N.N., Shchukin V.A., Fiol G., Kuntz M., Lochmann A., Schulz O., Reissmann L., Posilovic K., Bimberg D., Novikov I.I., Shernyakov Yu.M., Gordeev N.Y., Maximov M.V., Kryzhanovskaya N.V., Zhukov A.E., Semenova E.S., Vasil'ev A.P., Ustinov V.M., and Kovsh A.R. Appl. Phys. Lett. 89 (2006) 041113
24. Liu H.Y., Liew S.L., Badcock T., Mowbray D.J., Skolnick M.S., Ray S.K., Choi T.L., Groom K.M., Stevans B., Hasbullah F., Jin C.Y., Hopkinson M., and Hogg R.A. Appl. Phys. Lett. 89 (2006) 073113
25. Mi Z., Bhattacharya P., and Yang J. Appl. Phys. Lett. 89 (2006) 153109