The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

Semiconductors

Volumn 36, Issue 9, 2002, Pages 1020-1026

  Sizov, D S ^a   Maksimov, M V ^a   Tsatsul'nikov A F ^a   Cherkashin, N A ^a   Kryzhanovskaya, N V ^a   Zhukov, A B ^a   Maleev, N A ^a   Mikhrin, S S ^a   Vasil'ev A P ^a   Selin, R ^b   Ustinov, V M ^a   Ledentsov, N N ^a   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036752762     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1507285     Document Type: Article

References (24)

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