Temperature-dependent gain and threshold in P-doped quantum dot lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 5, 2007, Pages 1261-1266

  Smowton, Peter M ^a   Sandall, Ian C ^b   Mowbray, David J ^c   Liu, Hui Yun ^c   Hopkinson, Mark ^c  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Long wavelength lasers; Quantum dots; Semiconductor lasers

Indexed keywords

GAIN MEASUREMENT; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; THRESHOLD CURRENT DENSITY;

LONG WAVELENGTH LASERS; TEMPERATURE CHARACTERISTICS; TEMPERATURE-DEPENDENT GAIN; TRANSITION ENERGY;

SEMICONDUCTOR LASERS;

EID: 35348982955     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.903375     Document Type: Conference Paper

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