Tunneling injection lasers: A new class of lasers with reduced hot carriere effects

IEEE Journal of Quantum Electronics

Volumn 32, Issue 9, 1996, Pages 1620-1628

  Bhattacharya, Pallab ^a,b   Singh, Jasprit ^a,b   Yoon, Howard ^a,b   Zhang, Xiangkun ^a,b   Gutierrez Aitken, Augusto ^a,b   Lam, Yeeloy ^a,b  

^a The Department of Civil and Environmental Engineering   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON TUNNELING; HOT CARRIERS; LIGHT EMISSION; LIGHT MODULATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

AUGER RECOMBINATION; ELECTRON RELAXATION; HOT CARRIER EFFECTS; STIMULATED EMISSION; TUNNELING INJECTION LASERS;

QUANTUM WELL LASERS;

EID: 0030243143     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.535367     Document Type: Article

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