Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45 μm metamorphic InAs quantum dot lasers on GaAs

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 923-926

  Mi, Z ^a   Yang, J ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

A3. Molecular beam epitaxy; B3. Laser diodes

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMIC STABILITY;

QUANTUM DOT HETEROSTRUCTURES; ROOM TEMPERATURE; ULTRA-LOW THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 33947314128     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.112     Document Type: Article

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