InGaAs-GaAs quantum-dot lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 196-205

  Bimberg, D ^a,c,d,e   Kirstaedter, N ^a   Ledentsov, N N ^b   Alferov, Zh I ^b   Kop'ev, P S ^b   Ustinov, V M ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c GOETHE UNIVERSITY   (Germany)

^d MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^e RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Characteristic temperature; Gain; Linewidth enhancemant factor; Quantum dot gain; Semiconductor lasers; Threshold current density

Indexed keywords

BAND STRUCTURE; BANDWIDTH; CURRENT DENSITY; ELECTRONIC DENSITY OF STATES; LIGHT EMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; THERMAL EFFECTS;

LINEWIDTH ENHANCEMENT FACTOR;

SEMICONDUCTOR LASERS;

EID: 0031108828     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605656     Document Type: Article

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