High temperature performance of self-organised quantum dot laser with stacked p-doped active region

Electronics Letters

Volumn 38, Issue 14, 2002, Pages 712-713

  Shchekin, O B ^a   Ahn, J ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; LASER PULSES; LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

MODULATION DOPING; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0037019212     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020509     Document Type: Article

References (9)

1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Low threshold oxide-confined 1.3 μm quantum dot laser
3. Extremely low room-temperature threshold current density diode lasers using InAs dots in InGaAs quantum well
4. 1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition
5. High temperature operating 1.3 μm quantum dot lasers for telecommunication applications
6. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm
7. 1.3 μm InAs quantum dot laser with To = 160 K from 0 to 80°C
8. The role of p-type doping and the density of states on the modulation response of quantum dot lasers
9. Hydrolyzation oxidation of AlGaAs-AlAs-GaAs quantum well heterostructures and superlattices