DC and dynamic characteristics of P-doped and tunnel injection 1.65-μm InAs quantum-dash lasers grown on InP (001)

IEEE Journal of Quantum Electronics

Volumn 42, Issue 12, 2006, Pages 1224-1232

  Mi, Zetian ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Auger recombination; Characteristics temperature; Modulation bandwidth; P doping; Quantum dash laser; Threshold current; Tunnel injection

Indexed keywords

BANDWIDTH; CURRENT DENSITY; FREQUENCY MODULATION; INJECTION LASERS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE;

AUGER RECOMBINATION; MODULATION BANDWIDTH; QUANTUM-DASH LASERS; THRESHOLD CURRENT; TUNNEL INJECTION;

QUANTUM WELL LASERS;

EID: 33751361645     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.883497     Document Type: Article

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