InGaN/GaN blue light-emitting diodes with self-assembled quantum dots

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 389-392

  Su, Y K ^a   Chang, S J ^a   Ji, L W ^a   Chang, C S ^a   Wu, L W ^a   Lai, W C ^a   Fang, T H ^b   Lam, K T ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c TOKO UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECT; BLUE SHIFT; INDIUM GALLIUM NITRIDE; MULTIPLE QUANTUM DOT;

ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ENERGY GAP; EXCITONS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642306311     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/016     Document Type: Article

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