Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p -type modulation doping levels

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Jin, C Y ^a,b   Liu, H Y ^c   Jiang, Q ^a   Hopkinson, M ^a   Wada, O ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b KOBE UNIVERSITY   (Japan)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CABLE STAYED BRIDGES; MODULATION; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS;

DOPING; DOPING LEVELS; INAS/GAAS; LASING THRESHOLDS; OCCUPATION PROBABILITIES; OPERATING CONDITIONS; QUANTUM DOT; QUANTUM-DOT LASERS; ROOM TEMPERATURES; TEMPERATURE DEPENDENCES; TEMPERATURE STABILITIES; THEORETICAL MODELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 54949155499     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3003874     Document Type: Article

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