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IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 135-142

Ground-state emission and gain in ultralow-threshold InAs-InGaAs Quantum-dot lasers

(7) Eliseev, Petr G a,b,c Li, H b Liu, G T c Stintz, Andreas b Newell, T C b Lester, L F a,b Malloy, K J a,b

a IEEE (United States)

b UNIVERSITY OF NEW MEXICO (United States)

c LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

Author keywords

Laser diodes; Optical gain; Quantum dots; Semiconductor lasers; Threshold current

Indexed keywords

DOT-IN-A-WELL LASER; GROUND STATE EMISSION; QUANTUM DOT LASER; RATE EQUATION MODEL; THRESHOLD CURRENT;

CARRIER CONCENTRATION; CURRENT DENSITY; GROUND STATE; LIGHT EMISSION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS;

QUANTUM WELL LASERS;

EID: 0035263919 PISSN: 1077260X EISSN: None Source Type: Journal
DOI: 10.1109/2944.954121 Document Type: Article

Times cited : (111)

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