3.9W CW power from sub-monolayer quantum dot diode laser

Electronics Letters

Volumn 35, Issue 21, 1999, Pages 1845-1847

  Zhukov, A E ^a,b   Kovsh, A R ^a,b   Mikhrin, S S ^a,b   Maleev, N A ^a,b   Ustinov, V M ^a,b   Livshits, D A ^a,b   Tarasov, I S ^a,b   Bedarev, D A ^a,b   Maximov, M V ^a,b   Tsatsul'Nikov, A F ^a,b   Soshnikov, I P ^a,b   Kop'Ev, P S ^a,b   Alferov, Zh I ^a,b   Ledentsov, N N ^a,b   Bimberg, D ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CONTINUOUS WAVE LASERS; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL RESOLVING POWER; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

CATASTROPHIC OPTICAL MIRROR DAMAGE (COMD); GRADED-INDEX WAVEGUIDES; SUB-MONOLAYER QUANTUM DOT DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 14344267976     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991264     Document Type: Article

References (8)

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