Visible InGaN/GaN quantum-dot materials and devices

Proceedings of the IEEE

Volumn 95, Issue 9, 2007, Pages 1853-1865

  Grandjean, Nicolas ^a   Ilegems, Marc ^a  

^a EPFL   (Switzerland)

Author keywords

GaN; III V semiconductors; InGaN alloy; Laser diodes; Light emitting diodes; Photoluminescence; Quantum dots; Quantum wells

Indexed keywords

ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; NANOCRYSTALS; NITRIDES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM DOT LASERS; QUANTUM WELL LASERS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; WIDE BAND GAP SEMICONDUCTORS;

IN COMPOSITIONS; INGAN ALLOY; INGAN QUANTUM WELLS; INTERNAL ELECTRIC FIELDS; OPTICAL TRANSITION ENERGIES; QUANTUM CONFINED STARK EFFECT; QUANTUM CONFINEMENT EFFECTS; QUANTUM DOT MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 64349118416     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2007.900970     Document Type: Article

References (67)

1. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J.-L. Rouvie're, "Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN," Phys. Rev. B, vol. 56, pp.R7069-R7072, 1997.
2. B. Damilano, N. Grandjean, F. Semond, J. Massies, and M. Leroux, "From visible to white light emission by GaN quantum dots on Si(111) substrate," Appl. Phys. Lett., vol. 75, pp. 962-964, 1999.
3. J. Tersoff and F. K. LeGoues, "Competing relaxation mechanisms in strained layers," Phys. Rev. Lett., vol. 72, pp. 3570-3573, 1994.
4. M. Miyamura, K. Tachibana, and Y. Arakawa, "High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 80, pp. 3937-3939, 2002.
5. D. Simeonov, E. Feltin, J.-F. Carlin, R. Butte, M. Ilegems, and N. Grandjean, "Stranski- Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy," J. Appl. Phys., vol. 99, pp. 083509-083515, 2006.
6. S. Kako, K. Hoshino, S. Iwamoto, S. Ishida, and Y. Arakawa, "Exciton and biexciton luminescence from single hexagonal GaN/ AlN self-assembled quantum dots," Appl. Phys. Lett., vol. 85, pp. 64-66, 2004.
7. A. D. Andreev and E. P. O'Reilly, "Theory of the electronic structure of GaN/AlN hexagonal quantum dots," Phys. Rev. B, vol. 62, pp. 15 851-15 870, 2000.
8. V. Ranjan, G. Allan, C. Priester, and C. Delerue, "Self-consistent calculationsof the optical properties of GaN quantum dots," Phys. Rev. B, vol. 68, pp. 115 305- 1 153 012, 2003.
9. S. Tanaka, S. Iwai, and Y. Aoyagi, "Self-assembling GaN quantum dots on AlxGa1xN surfaces using a surfactant," Appl. Phys. Lett., vol. 69, pp. 4096-4098, 1996.
10. M. Copel, M. C. Reuter, E. Kaxiras, and R. M. Tromp, "Surfactants in epitaxial growth," Phys. Rev. Lett., vol. 63, pp. 632-635, 1989.
11. N. Grandjean, J. Massies, and V. H. Etgens, "Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers," Phys. Rev. Lett., vol. 69, pp. 796-799, 1992.
12. E. J. Tarsa, B. Heyring, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy," J. Appl. Phys., vol. 82, pp. 5472-5479, 1997.
13. N. Grandjean, M. Leroux, J. Massies, M. Mesrine, and M. Laügt, "Molecular beam epitaxy of GaN under N-rich conditions using NH3," Jpn. J. Appl. Phys., vol. 38, pp. 618-621, 1999.
14. J. Elsner, M. Haugk, G. Jungnickel, and T. Frauenheim, "Theory of Ga, N and H terminated GaN (0 0 0 1)/(0 0 01) surfaces," Solid State Commun., vol. 106, pp. 739-743, 1998.
15. N. Garro, A. Cros, J. A. Budagosky, A. Cantarero, A. Vinattieri, M. Gurioli, S. Founta, H. Mariette, and B. Daudin, BReduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots," Appl. Phys. Lett., vol. 87, pp. 011101-011103, 2005.
16. F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides," Phys. Rev. B, vol. 56, pp. R10024-R10027, 1997.
17. M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, "Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells," Phys. Rev. B, vol. 58, pp. R13371-R13373, 1998.
18. A. Bonfiglio, M. Lomascolo, G. Traetta, R. Cingolani, A. Di Carlo, F. Della Sala, P. Lugli, A. Botchkarev, and H. Morkoc, "Well-width dependence of the ground level emission of GaN/AlGaN quantum wells," Grandjean and Ilegems: Visible InGaN/GaN Quantum-Dot Materials and Devices J. Appl. Phys., vol. 87, pp. 2289-2292, 2000.
19. M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, E. Warde, F. Guillot, E. Monroy, E. Bellet-Amalric, T. Remmele, and M. Albrecht, "Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells," Phys. Rev. B, vol. 73, pp. 125 347-125 357, 2006.
20. T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, ". Gil, N. Grandjean, F. Semond, ". Damilano, A. Dussaigne, and J. Massies, "Radiative lifetime of a single electron-hole pair in GaN/ AlN quantum dots," Phys. Rev. B, vol. 73, pp. 113 304-113 303, 2006.
21. C. Weisbuch and J. Nagle, Science and Engineering of 1 D and 0 D Semiconductor Systems, ser. NATO ASI Series. New York: Plenum, 1990, p. 319.
22. J. M. Ge'rard, O. Cabrol, and B. Sermage, "InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si," Appl. Phys. Lett., vol. 68, pp. 3123-3125, 1996.
23. J. G. Lozano, A. M. Sánchez, R. García, D. Gonzalez, O. Briot, and S. Ruffenach, "Misfit relaxation of InN quantum dots: Effect of the GaN capping layer," Appl. Phys. Lett., vol. 88, pp. 151 913-151 915, 2006.
24. N. Grandjean and J. Massies, "Real time control of InxGa1xN molecular beam epitaxy growth," Appl. Phys. Lett., vol. 72, pp. 1078-1080, 1998.
25. K. Tachibana, T. Someya, and Y. Arakawa, "Nanometer-scale InGaN self-assembledquantum dots grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 74, pp. 383-385, 1999.
26. R. A. Oliver, G. A. D. Briggs, M. J. Kappers, C. J. Humphreys, S. Yasin, J. H. Rice, J. D. Smith, and R. A. Taylor, "InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal," Appl. Phys. Lett., vol. 83, pp. 755-757, 2003.
27. N. Grandjean, ". Damilano, and J. Massies, BGroup-III nitride quantum heterostructures grown by molecular beam epitaxy," J. Phys., Condens. Matter, vol. 13, pp. 6945-6960, 2001.
28. J. Wang, M. Nozaki, M. Lachab, Y. Ishikawa, R. S. Qhalid Fareed, T. Wang, M. Hao, and S. Sakai, "Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots," Appl. Phys. Lett., vol. 75, pp. 950-952, 1999.
29. K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa, "Selective growth of InGaN quantum dot structures and their microphotoluminescence at room tempereature," Appl. Phys. Lett., vol. 76, pp. 3212-3214, 2000.
30. K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa, "Uniform array of GaN quantum dots in AlGaN matrix by selective MOCVD growth," Phys. Stat. Sol. (B), vol. 228, pp. 187-190, 2001.
31. V. Pérez-Solo'rzano, A. Gröning, M. Jetter, T. Riemann, and J. Christen, "Near-red emission from site-controlled pyramidal InGaN quantum dots," Appl. Phys. Lett., vol. 87, pp. 163 121-163 123, 2005.
32. P. R. Edwards, R. W. Martin, I. M. Watson, C. Liu, R. A. Taylor, J. H. Rice, J. H. Na, J. W. Robinson, and J. D. Smith, "Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays," Appl. Phys. Lett., vol. 85, pp. 4281-4284, 2004.
33. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures," Appl. Phys. Lett., vol. 69, pp. 4188-4190, 1996.
34. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, "Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm," Appl. Phys. Lett., vol. 70, pp. 981-983, 1997.
35. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and S. Sota, "Effective bandgap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures," Appl. Phys. Lett., vol. 73, pp. 2006-2008, 1998.
36. K. P. O'Donnell, R. W. Martin, and P. G. Middleton, "Origin of luminescence from InGaN diodes," Phys. Rev. Lett., vol. 82, pp. 237-240, 1999.
37. K. P. O'Donnell, J. F. W. Mosselmans, R. W. Martin, S. Pereira, and M. E. White, BStructural analysis of InGaN epilayers," J. Phys., Condens. Matter, vol. 13, pp. 6977-6991, 2001.
38. I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. S. Sakharov, W. V. Lundin, A. F. Tsatsul'nikov, A. S. Usikov, Z. I. Alferov, Y. G. Musikhin, and D. Gerthsen, "Quantum dot origin of luminescence in InGaN-GaN structures," Phys. Rev. B, vol. 66, pp. 155 310-155 314, 2002.
39. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi, "Composition fluctuations in InGaN analyzed by transmission electron microscopy," Phys. Stat. Sol. A, vol. 177, pp. 145-155, 2000.
40. H. K. Cho, J. Y. Lee, N. Sharma, C. J. Humphreys, G. M. Yang, C. S. Kim, J. H. Song, and P. W. Yu, "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells," Appl. Phys. Lett., vol. 79, pp. 2594-2596, 2001.
41. P. Ruterana, S. Kret, A. Vivet, G.Maciejewski, and P. Dluzewski, "Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers," J. Appl. Phys., vol. 91, pp. 8979-8985, 2002.
42. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, BElectron-beam-induced strain within InGaN quantum wells: False indium Fcluster detection in the transmission electron microscope," Appl. Phys. Lett., vol. 83, pp. 5419-5421, 2003.
43. A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, "Suppression of nonradiative recombination by V-shaped pits in GaInN/ GaN quantum wells produces a large increase in the light emission efficiency," Phys. Rev. Lett., vol. 95, pp. 127 402-127 405, 2005.
44. S.-H. Park and S.-L. Chang, "Crystalorientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors," Phys. Rev. B, vol. 59, pp. 4725-4737, 1999.
45. A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, "Strain-induced polarization in wurtzite III-nitride semipolar layers," J. Appl. Phys., vol. 100, pp. 023521-023522, 2006.
46. S. Sonderegger, E. Feltin, M. Merano, A. Crottini, J.-F. Carlin, R. Sachot, B. Deveaud, N. Grandjean, and J. D. Ganie're, BHigh spatial resolution picosecond cathodoluminescence of InGaN quantum wells," Appl. Phys. Lett., vol. 89, pp. 232 109-232 111, 2006.
47. L. Bellaiche, T. Mattila, L.-W. Wang, S.-H. Wei, and A. Zunger, "Resonant hole localization and anomalous optical bowing in InGaN alloys," Appl. Phys. Lett., vol. 74, pp. 1842-1844, 1999.
48. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, H. J. Han, and T. Sota, "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors," Nature Mater., vol. 5, pp. 810-816, 2006.
49. J. H. Rice, J. W. Robinson, J. H. Na, K. H. Lee, R. A. Taylor, D. P. Williams, E. O. O'Reilly, A. D. Andreev, Y. Arakawa, and S. Yasin, BBiexciton and exciton dynamics in single InGaN quantum dots," Nanotechnology, vol. 16, pp. 1477-1481, 2005.
50. O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa, "Narrow photoluminescence peaks from localized states in GaInN quantum dot structures," Appl. Phys. Lett., vol. 76, pp. 2361-2363, 2000.
51. K. Okamoto, A. Kaneta, Y. Kawakami, S. Fujita, J. Choi, M. Terazima, and T. Mukai, BConfocal microphotoluminescence of GaInN-based light emitting diodes," J. Appl. Phys., vol. 98, pp. 064503-064509, 2005.
52. D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, "Optical and microstructural studies of InGaN/GaN single-quantum-well structures," J. Appl. Phys., vol. 97, pp. 103 508-1 035 012, 2005.
53. H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholtz, "Probing individual localization centers in an GaInN/GaN quantum well," Phys. Rev. Lett., vol. 92, pp. 106 802-106 805, 2004.
54. S. Nakamura, "InGaN-based violet laser diodes," Semicond. Sci. Technol., vol. 14, pp. R27-R40, 1999.
55. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, "High luminescent efficiency of GaInN quantum wells grown on GaInN underlying layers," Appl. Phys. Lett., vol. 85, pp. 3089-3091, 2004.
56. H. Y. Ryu, K. H. Ha, J. H. Chae, K. S. Kim, J. K. Son, O. H. Nam, Y. J. Park, and J. I. Shim, "Evaluation of radiative efficiency in InGaN blue-violet laser diode structures using electroluminescence characteristics," Appl. Phys. Lett., vol. 89, pp. 171 106-171 108, 2006.
57. Y. Narukawa, Y. Kawakami, S. Fujita, and S. Nakamura, "Dimensionality of excitons in laser-diode structures composed of GaInN multiple quantum wells," Phys. Rev B, vol. 59, pp. 10 283-10 288, 1999.
58. A. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, "High dislocation densities in high efficiency GaN-based light emitting diodes," Appl. Phys. Lett., vol. 66, pp. 1249-1251, 1995.
59. E. Rosencher and B. Vinter, Optoelectronics. Cambridge, U.K.: Cambridge Univ. Press, 2002.
60. Y. Arakawa, "Progress in GaN-based quantum dots for optoelectronic applications," IEEE Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 823-832, Jul. 2002. Grandjean and Ilegems: Visible InGaN/GaN Quantum-Dot Materials and Devices 1864
61. W. W. Chow, A. Grindt, and S. W. Koch, "Calculation of quantum well gain spectra," Opt. Express, vol. 2, pp. 119-124, 1998.
62. B. Witzigmann, V. Laino, M. Luissier, U. T. Schwartz, G. Feicht, W. Wegscheider, K. Engl, M. Futritsch, A. Leber, A. Lell, and V. Haerle, "Microscopic analysis of optical gain in GaInN/GaN quantum wells," Appl. Phys. Lett., vol. 88, pp. 021104-021106, 2006.
63. W. W. Chow and H. C. Schneider, "Theory of laser gain in GaInN quantum dots," Appl. Phys. Lett., vol. 81, pp. 2566-2568, 2002.
64. K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel, "Room temperature lasing oscillation in a GaInN selfassembled quantum dot laser," Appl. Phys. Lett., vol. 75, pp. 2605-2607, 1999.
65. S. Nakamura, M. Senoh, S. Nagahawa, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pp. L74-L76, 1996.
66. T. Mukai, S. Nagahama, T. Kozaki, M. Sano, D. Morita, T. Yanamoto, M. Yamamoto, K. Akashi, and S. Masui, "Current status and future prospects of GaN-based LEDs and LDs," Phys. Stat. Sol. (A), vol. 201, pp. 2712-2716, 2004.
67. H. Hirayama, "Quaternary InAlGaN-based high efficiency ultraviolet light emitting diodes," J. Appl. Phys., vol. 97, pp. 091101-091119, 2005.