Single-mode monolithic quantum-dot VCSEL in 1.3 μmwith sidemode suppression ratio over 30 dB

IEEE Photonics Technology Letters

Volumn 18, Issue 7, 2006, Pages 847-849

  Chang, Y H ^a   Peng, P C ^a   Tsai, W K ^a   Lin, Gray ^b   Lai, Fang ^a   Hsiao, R S ^b   Yang, H P ^b   Yu, H C ^b   Lin, K F ^b   Chi, J Y ^b   Wang, S C ^a   Kuo, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Bandwidth; Quantum dots (QDs); Single mode; Surface emitting laser

Indexed keywords

DOPED STRUCTURES; EYE DIAGRAMS; GAAS SUBSTRATES; MODULATION BANDWIDTH; OPTICAL COMMUNICATION WAVELENGTH; OUTPUT POWER; QUANTUM DOTS; ROOM TEMPERATURE; SIDE MODE SUPPRESSION RATIOS; SINGLE MODE; SINGLE MODE OPERATION; SLOPE EFFICIENCIES; VERTICAL-CAVITY SURFACE EMITTING LASER;

BANDWIDTH; GALLIUM ALLOYS; LASERS; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; SURFACE EMITTING LASERS;

QUANTUM DOT LASERS;

EID: 33845728799     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.871831     Document Type: Article

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