Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Applied Physics Letters

Volumn 85, Issue 5, 2004, Pages 704-706

  Liu, H Y ^a   Sellers, I R ^a   Badcock, T J ^a   Mowbray, D J ^a   Skolnick, M S ^a   Groom, K M ^a   Gutierrez M ^a   Hopkinson, M ^a   Ng, J S ^a   David, J P R ^a   Beanland, R ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Bookham Technology plc   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EVAPORATION; MULTILAYERS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM-DOT LASERS; SPACER LAYERS; THREADING DISLOCATIONS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 4344634808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776631     Document Type: Article

References (9)

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