Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers

IEEE Photonics Technology Letters

Volumn 18, Issue 9, 2006, Pages 1022-1024

  Kim, Jungho ^a   Su, Hui ^a   Minin, Serge ^a   Chuang, Shun Lien ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Linewidth enhancement factor (LEF); Quantum dot (QD); Semiconductor lasers

Indexed keywords

CARRIER DENSITY; FP LASER; LINEWIDTH ENHANCEMENT FACTOR; MODAL GAIN; OPTICAL LINEWIDTH; P-TYPE DOPING; PULSE CURRENTS; QD LASERS; QUANTUM DOT (QD); QUANTUM DOTS; THEORETICAL CALCULATIONS; THEORETICAL MODELS; THEORETICAL RESULT;

DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; LASERS; LIGHT REFRACTION; LINEWIDTH; PHOSPHORUS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 34047199166     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.873456     Document Type: Article

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