SCOPUS 정보 검색 플랫폼

Microelectronics Journal

Volumn 33, Issue 4, 2002, Pages 323-329

Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures

(1) Leite, J R a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

InGaN; Nitrides; Phase separation; Quantum dots; Raman

Indexed keywords

DECOMPOSITION; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHASE DIAGRAMS; PHASE SEPARATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION ANALYSIS;

QUANTUM CONFINEMENT EFFECTS; RADIATIVE EMISSIONS;

LIGHT EMITTING DIODES;

EID: 0036531837 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(01)00126-4 Document Type: Conference Paper

Times cited : (10)

References (28)

1
- 0003453296
- Springer, Berlin
- (1997) The Blue Laser Diode
- Nakamura, S.¹ Fasol, G.²

2
- 0005985130
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

3
- 0032655753
- (1999) Semic. Sci. Technol. , vol.14
- Nakamura, S.¹

4
- 0003809785
- Academic Press, New York
- (1998) Gallium Nitride (GaN) I and II Semiconductors and Semimetals , vol.50
- Pankove, J.I.¹ Moustakas, T.D.²

5
- 0003809785
- Academic Press, New York
- (1999) Gallium Nitride (GaN) I and II Semiconductors and Semimetals , vol.57
- Pankove, J.I.¹ Moustakas, T.D.²

6
- 0002864028
- (1998) Rep. Prog. Phys. , vol.61 , pp. 1
- Orton, J.W.¹ Foxon, C.T.²

7
- 0032181962
- (1998) J. Phys. D: Appl. Phys. , vol.31 , pp. 2653
- Ambacher, O.¹

8
- 0032648135
- (1999) J. Mater. Sci. , vol.10 , pp. 227
- Monemar, B.¹

9
- 0347874296
- (2000) J. Appl. Phys. , vol.87 , pp. 965
- Jain, S.C.¹ Willander, M.² Narayan, J.³ Van Overstraeten, R.⁴

10
- 0001693852
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2498
- Yang, H.¹ Zheng, L.X.² Li, J.B.³ Wang, X.J.⁴ Xu, D.P.⁵ Wang, Y.T.⁶ Hu, X.W.⁷ Han, P.D.⁸

11
- 0001775284
- (2000) Appl. Phys. Lett. , vol.76 , pp. 13
- As, D.J.¹ Richter, A.² Busch, J.³ Lübbers, M.⁴ Mimkes, J.⁵ Lischka, K.⁶

12
- 0033221675
- (1999) Phys. Stat. Sol. A , vol.176 , pp. 131
- Gomez-Cuatzin, H.¹ Tardy, J.² Rojo-Romeo, P.³ Philippe, A.⁴ Bru-Chevalier, C.⁵ Souifi, A.⁶ Guillot, G.⁷ Martinez-Guerrero, E.⁸ Feuillet, G.⁹ Baudin, B.¹⁰ Aboughé-Nzé, P.¹¹ Monteil, Y.¹²

13
- 0034226093
- (2000) Phys. Stat. Sol. A , vol.180 , pp. 241
- Taniyasu, Y.¹ Suzuki, K.² Lim, D.H.³ Jia, A.W.⁴ Shimotomai, M.⁵ Kato, Y.⁶ Kobayashi, M.⁷ Yoshikawa, A.⁸ Takahashi, K.⁹

14
- 0033528941
- (1999) Mater. Sci. Engineer. , vol.B59 , pp. 298
- Chichibu, S.F.¹ Abare, A.C.² Mack, M.P.³ Minsky, M.S.⁴ Deguchi, T.⁵ Cohen, D.⁶ Kozodoy, P.⁷ Fleischer, S.B.⁸ Keller, S.⁹ Speck, J.S.¹⁰ Bowers, J.E.¹¹ Hu, E.¹² Mishra, U.K.¹³ Coldreu, L.A.¹⁴ Den Baars, S.P.¹⁵ Wada, K.¹⁶ Sota, T.¹⁷ Nakamura, S.¹⁸

15
- 0000589161
- (2000) Phys. Rev. Lett. , vol.84 , pp. 3666
- Lemos, V.¹ Silveira, E.² Leite, J.R.³ Tabata, A.⁴ Trentin, R.⁵ Scolfaro, L.M.R.⁶ Frey, T.⁷ As, D.J.⁸ Schikora, D.⁹ Lischka, K.¹⁰

16
- 0000014720
- (1996) J. Appl. Phys. , vol.79 , pp. 4137
- Tabata, A.¹ Enderlein, R.² Leite, J.R.³ Da Silva, S.W.⁴ Galzerani, J.C.⁵ Schikora, D.⁶ Kloidt, M.⁷ Lischka, K.⁸

17
- 0000466799
- (1999) Appl. Phys. Lett. , vol.74 , pp. 362
- Tabata, A.¹ Lima, A.P.² Teles, L.K.³ Scolfaro, L.M.R.⁴ Leite, J.R.⁵ Lemos, V.⁶ Schöttker, B.⁷ Frey, T.⁸ Schikora, D.⁹ Lischka, K.¹⁰

18
- 0000727341
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1095
- Tabata, A.¹ Leite, J.R.² Lima, A.P.³ Silveira, E.⁴ Lemos, V.⁵ Frey, T.⁶ As, D.J.⁷ Schikora, D.⁸ Lischka, K.⁹

19
- 0001750575
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3602
- Silveira, E.¹ Tabata, A.² Leite, J.R.³ Trentin, R.⁴ Lemos, V.⁵ Frey, T.⁶ As, D.J.⁷ Schikora, D.⁸ Lischka, K.⁹

20
- 0000659614
- (2000) Phys. Rev. , vol.B62 , pp. 2475
- Teles, L.K.¹ Furthmüller, J.² Scolfaro, L.M.R.³ Leite, J.R.⁴ Bechstedt, F.⁵

21
- 0006310310
- Proceedings of the International Workshop on Nitride Semiconductors, 12000
- IPAP Conference Series , pp. 689
- Teles, L.K.¹ Furthmüller, J.² Scolfaro, L.M.R.³ Leite, J.R.⁴ Bechstedt, F.⁵

22
- 4243812233
- (2001) Phys. Rev.
- Teles, L.K.¹ Furthmüller, J.² Scolfaro, L.M.R.³ Leite, J.R.⁴ Bechstedt, F.⁵

23
- 0000170952
- and references therein
- (1968) Trans. AIME , vol.242 , pp. 166
- Cahn, J.W.¹

24
- 0033242885
- (1999) Phys. Stat. Sol. B , vol.216 , pp. 265
- Goldhahn, R.¹ Scheiner, J.² Shokhovets, S.³ Frey, T.⁴ Köhler, U.⁵ As, D.J.⁶ Lischka, K.⁷

25
- 0037896270
- (1997) Appl. Phys. Lett. , vol.71 , pp. 909
- Mulhauser, J.R.¹ Jenichen, B.² Wassermeier, M.³ Brandt, O.⁴ Ploog, K.⁵

26
- 0000440515
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1230
- Mulhauser, J.R.¹ Brandt, O.² Trampert, A.³ Jenichen, B.⁴ Ploog, K.H.⁵

27
- 0032758798
- (1999) Semicond. Sci. Technol. , vol.14 , pp. 23
- Pugh, S.K.¹ Dugdale, D.J.² Brand, S.³ Abram, R.A.⁴

28
- 0009390584
- (1982) Sov. Phys. Semicond. , vol.16 , pp. 772
- Éfros, Al.L.¹ Éfros, A.L.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.