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Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 16, 2003, Pages

Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

(4) Le Ru, E C a Howe, P a Jones, T S a Murray, R a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM ARSENIDE; INDIUM;

ARTICLE; CONCENTRATION RESPONSE; GROWTH RATE; LOW TEMPERATURE; MEASUREMENT; OPTICS; QUANTUM MECHANICS; STRESS STRAIN RELATIONSHIP; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; TEMPERATURE SENSITIVITY;

EID: 0037644893 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.67.165303 Document Type: Article

Times cited : (182)

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