Quantization of multiparticle Auger rates in semiconductor quantum dots

Science

Volumn 287, Issue 5455, 2000, Pages 1011-1014

  Klimov, V I ^a   Mikhailovsky, A A ^a   McBranch, D W ^a   Leatherdale, C A ^b   Bawendi, M G ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; NANOPARTICLE; SELENIUM;

ARTICLE; ELECTRON; GAS; PHOTON; PRIORITY JOURNAL; QUANTUM CHEMISTRY; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0034635390     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.287.5455.1011     Document Type: Article

References (21)

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15. In (14), subpicosecond intraband energy relaxation was observed in the low pump intensity regime (less than 1 e-h pair per dot on average). For the multiparticle regime studied in this work, relaxation should be even faster because of the increasing efficiency of Auger-type energy transfer processes (7) (these intraband processes are different from the interband Auger recombination studied here).
16. V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, Phys. Rev. B 60, 13740 (1999).
17. In spherical QDs, electron states are labeled as nL, where L = S, P, D, etc. is the atomiclike notation for the angular momentum of the electron envelope wave function, and n is the number ot the state of a given symmetry. A similar notation is used for hole states, with the addition of a subscript that denotes the total hole angular momentum, which is the sum of the valence-band Bloch-function momentum and the momentum of the hole envelope wave function [for example, see (4)].
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19. -〈N0〉, m = 1, 2 . . . N
20. 0〉 = 1.6 (circles) and 1.3 (dashed line).
21. Supported by Los Alamos Directed Research and Development funds under the auspices of the U.S. Department of Energy. C.A.L. and M.G.B. also acknowledge partial funding from the NSF-MRSEC program under grant DMR-9400334.