Enhanced modulation bandwidth (20 GHz) of In0.4Ga0.6As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: Role of carrier relaxation and differential gain

IEEE Photonics Technology Letters

Volumn 10, Issue 7, 1998, Pages 932-934

  Klotzkin, David ^a   Kamath, Kishore ^a   Vineberg, Karen ^a   Bhattacharya, Pallab ^a,c   Murty, Ramana ^b   Laskar, Joy ^b  

^a University of Michigan   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IEEE

Author keywords

Bandwidth; Modulation; Quantum dot lasers

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; CRYOGENICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON SCATTERING; LIGHT MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

CARRIER RELAXATION; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0032121524     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681274     Document Type: Article

References (13)

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