Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1225-1226

  Huffaker, D L ^a   Graham, L A ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Lasers; Vertical cavity surface emitting lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; OXIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031551233     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970825     Document Type: Article

References (12)

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