InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 755-757

  Oliver, Rachel A ^a   Briggs, G Andrew D ^a   Kappers, Menno J ^b   Humphreys, Colin J ^b   Yasin, Shazia ^c   Rice, James H ^a   Smith, Jonathon D ^a   Taylor, Robert A ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EXCITONS; FILM GROWTH; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; VAPOR PHASE EPITAXY;

BUFFER LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042513733     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1595716     Document Type: Article

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