InGaN/GaN multi-quantum dot light-emitting diodes

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 114-118

  Ji, L W ^a   Su, Y K ^a   Chang, S J ^a   Chang, C S ^a   Wu, L W ^a   Lai, W C ^a   Du, X L ^b   Chen, H ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. Band filling; A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B1. InGaN; B3. Light emitting diode

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL GROWTH; ELECTROLUMINESCENCE; EXCITONS; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

BAND-FILLING; INGAN; INJECTION CURRENTS; MQD; MQW;

GALLIUM NITRIDE;

EID: 1242308877     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.083     Document Type: Article

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