Temperature dependence of the threshold current density of a quantum dot laser

IEEE Journal of Quantum Electronics

Volumn 34, Issue 5, 1998, Pages 841-850

  Asryan, L V ^a   Suris, R A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Quantum well lasers; Semiconductor heterojunctions; Semiconductor lasers

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CARRIER RECOMBINATION; OPTICAL CONFINEMENT LAYERS (OCL); RADIATIVE RECOMBINATION; SEMICONDUCTOR QUANTUM DOT LASERS;

QUANTUM WELL LASERS;

EID: 0032072095     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.668772     Document Type: Article

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