Very-low-threshold current density continuous-wave quantum-dot laser diode

Electronics Letters

Volumn 44, Issue 11, 2008, Pages 679-681

  Freisem, S ^a,b   Ozgur, G ^a   Shavritranuruk, K ^a   Chen, H ^a   Deppe, D G ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b SdPhotonics LLC

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY EFFICIENCY; HEAT SINKS; SEMICONDUCTOR QUANTUM DOTS; STIMULATED EMISSION; THRESHOLD CURRENT DENSITY;

QUANTUM-DOT LASER DIODES; ROOM TEMPERATURE; SLOPE EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 44349111113     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080656     Document Type: Article

References (3)

1. Park, G., Shchekin, O.B., Huffaker, D.L., and Deppe, D.G.: ' Low-threshold oxide-confined 1.3-m quantum-dot laser ', IEEE Photonics Technol. Lett., 2000, 12, p. 230-232 10.1109/68.826897 1041-1135
2. Sellers, I.R., Liu, H.Y., Groom, K.M., Childs, D.T., Robbins, D., Badcock, T.J., Hopkinson, M., Mowbray, D.J., and Skolnick, M.S.: ' 1.3m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density ', Electron. Lett., 2004, 40, p. 1412-1413 10.1049/el:20046692 0013-5194
3. Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J., and Skolnick, M.S.: ' High-performance three-layer 1.3-m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents ', IEEE Photonics Technol. Lett., 2005, 17, p. 1139-1141 10.1109/LPT.2005.846948 1041-1135