Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

Electronics Letters

Volumn 35, Issue 14, 1999, Pages 1163-1165

  Liu, G T ^a   Stintz, A ^a   Li, H ^a   Malloy, K J ^a   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INDIUM ARSENIDE QUANTUM DOTS; LASER WAFER; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0032689040     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990811     Document Type: Article

References (8)

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