Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1374-1375

  Kamath, K ^a   Bhattacharya, P ^a   Sosnowski, T ^a   Norris, T ^a   Phillips, J ^a  

^a University of Michigan   (United States)

Author keywords

Semiconductor junction lasers; Semiconductor quantum dots

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EMISSION WAVELENGTH; LASING; PHOTOLUMINESCENCE MEASUREMENT; ROOM TEMPERATURE OPERATION; SEPARATE CONFINEMENT HETEROSTRUCTURE; SPONTANEOUS RECOMBINATION TIME;

SEMICONDUCTOR LASERS;

EID: 0030188718     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960921     Document Type: Article

References (13)

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