High-performance quantum dot lasers and integrated optoelectronics on Si

Proceedings of the IEEE

Volumn 97, Issue 7, 2009, Pages 1239-1249

  Mi, Zetian ^a   Yang, Jun ^b   Bhattacharya, Pallab ^b   Qin, Guoxuan ^c   Ma, Zhenqiang ^c  

^a MCGILL UNIVERSITY   (Canada)

^b UNIVERSITY OF MICHIGAN   (United States)

^c University of Wisconsin Madison   (United States)

Author keywords

Epitaxy; GaAs; Membrane; Modulator; Quantum dot laser; Silicon photonics; Waveguide

Indexed keywords

AMORPHOUS SILICON; ELECTROABSORPTION MODULATORS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INTEGRATED OPTOELECTRONICS; LIGHT ABSORPTION; MEMBRANES; MODULATORS; NANOCRYSTALS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON PHOTONICS; WAVEGUIDES;

COUPLING COEFFICIENT; DISLOCATION REDUCTION; GAAS; HIGH TEMPERATURE STABILITY; LOW THRESHOLD CURRENT; MEMBRANE TRANSFERS; MONOLITHIC INTEGRATION; ON-CHIP INTEGRATION;

QUANTUM DOT LASERS;

EID: 67449119732     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2014780     Document Type: Article

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