0.98-μm multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 309-314

  Zhang, X ^a   Gutierrez Aitken, A ^a   Klotzkin, D ^a   Bhattacharya, P ^a,c   Caneau, C ^b   Bhat, Rajaram ^{b,c,d,e,f,g,h,i,j}  

^a UNIVERSITY OF MICHIGAN   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

^c IEEE

^d INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^e INDIAN INSTITUTE OF SCIENCE   (India)

^f RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^g GENERAL ELECTRIC COMPANY   (United States)

^h LUCENT TECHNOLOGIES   (United States)

ⁱ ELECTROCHEMICAL SOCIETY

^j Electrochemical Society ^*

more..

Author keywords

High speed lasers; Quantum well lasers

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRON TUNNELING; LIGHT MODULATION; NATURAL FREQUENCIES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE;

DIFFERENTIAL TRANSMISSION SPECTROSCOPY (DTS); HIGH SPEED LASERS;

INJECTION LASERS;

EID: 0031109087     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605672     Document Type: Article

References (28)

1. S. Morin, B. Deveaud, F. Clerot, K. Fujiwara, and K. Mitsunaga, "Capture of photoexcited carriers in a single quantum well with different confinement structures," IEEE J. Quantum Electron., vol. 27, pp. 1669-1675, 1991.
2. K. Y. Lau and A. Yariv, "Ultra-high speed semiconductor lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 121-138, 1985.
3. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 1990-2008, 1992.
4. B. Deveaud, J. Shah, and W. T. Tsang, "Capture of electrons and holes in quantum wells," Appl. Phys. Lett., vol. 52, pp. 1886-1888, 1988.
5. x As/InP heterostructures," Phys. Rev. B, vol. 46, pp. 1639-1648, 1992.
6. L. Davis, Y. L. Lam, Y. C. Chen, J. Singh, and P. K. Bhattacharys, "Carrier capture and relaxation in narrow quantum wells," IEEE J. Quantum Electron., vol. 30, pp. 2560-2564, 1994.
7. T. C. Wu, S. C. Kan, D. Vassilovski, and K. L. Lau, "Influence of separate-confinement layer band structure on the transport-limited modulation bandwidth in quantum well lasers," Appl. Phy. Lett., vol. 63, pp. 441-443, 1993.
8. W. Rideout, W. F. Sharfin, E. S. Koteles, M. O. Vassell, and B. Elman, "Well-barrier hole burning in quantum well laser," IEEE Photon. Technol. Lett., vol. 3, pp. 784-786, 1991.
9. P. Bhattacharya, J. Singh, H. Yoon, X. Zhang, A. Gutierrez-Aitken, and Y. Lam, "Tunneling injection lasers: A new class of lasers with reduced hot carrier effects," IEEE J. Quantum Electron., vol. 32, pp. 1620-1629, 1996.
10. C. Y. Sung, T. B. Norris, X. Zhang, Y. L. Lam, I. Vurgaftman, J. Singh, and P. Bhattacharya, "Studies of carrier relaxation in low dimensional structures," presented at the Modulated Semiconductor Structures Conf., Spain, July 1995.
11. L. Davis, H.C. Sun, H. Yoon, and P. Bhattacharya, "Small-signal modulation and temperature dependence of the tunneling injection laser," Appl. Phys. Lett., vol. 64, pp. 3222-3224, 1994.
12. H. Yoon, H. C. Sun, and P. Bhattacharya, "Dynamic linewidth of tunneling injection laser," Electron. Lett., vol. 30, pp. 1675-1677, 1994.
13. H. Yoon, A. L. Gutierrez-Aitken, R. Jambunathan, J. Singh, and P. Bhattacharya, "A 'cold' InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence," IEEE Photon. Technol. Lett., vol. 7, pp. 974-976, 1995.
14. F. Girardin, G. Duan, P. Gallion, A. Talneau, and A. Ougazzaden, "Experimental investigation of the relative importance of carrier heating and spectral-hole-burning on nonlinear gain in bulk and strained multi-quantum-well 1.55μm laser," Appl. Phys. Lett., vol. 67, pp. 771-773, 1995.
15. D. Deppe, private communication.
16. B. Zhao, T. R. Chen, and A. Yariv, "The extra differential gain enhancement in multiple-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 124-126, 1992.
17. Y. Arakawa and A. Yariv, "Quantum well lasers - Gain, spectra, dynamics," IEEE J. Quantum Electron., vol. QE-22, pp. 1887-1899, 1986.
18. S. D. Offsey, W. J. Schaff, P. J. Tasker, and L. F. Eastman, "Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers," IEEE Photon. Technol. Lett., vol. 2, pp. 9-11, 1990.
19. P. A. Morton, T. Tanbun-Ek, R. A. Logan, A. M. Sergent, P. F. Sciortino, Jr., and D. L. Coblentz "Frequency response subtraction for simple measurement of intrinsic laser dynamic properties," IEEE Photon. Technol. Lett., vol. 4, pp. 133-136, 1992.
20. M. C. Tatham, I. F. Lealman, Colin P. Seltzer, L. D. Westbrook, and D. M. Cooper, "Resonance frequency, damping, and differential gain in 1.5 μm multiple quantum-well lasers," IEEE J. Quantum Electron., vol. 28, pp. 408-414, 1992.
21. K. Uomi, "Modulation-doped multi-quantum well (MD-MQW) lasers, I. theory," Jpn. J. Appl. Phys., vol. 29, pp. 81-87, 1990.
22. K. Uomi, T. Mishima, and N. Chinone, "Modulation-doped multi-quantum well (MD-MQW) lasers, II. Experiment," Jpn. J. Appl. Phys., vol. 29, pp. 88-94, 1990.
23. 0.65 As/GaAs multiquantum well lasers," Electron. Lett., vol. 28, pp. 2141-2143, 1992.
24. S. Weisser, I. Esquivias, P. J. Tasker, J. D. Ralston, B. Romero, and J. Rosenzweig, "Impedance characteristics of quantum-well lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 1421-1423, 1994.
25. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers, Part A: Fundamental Principles. Orlando, FL: Academic, 1978, p. 181.
26. -3 dB > 40 GHz) 0.98 μm multiquantum well tunneling injection lasers determined from electrical impedance measurements," IEEE Photon. Technol. Lett., vol. 9, pp. 578-580, May 1997.
27. M. Grupen and K. Hess, "Severe gain separation due to dynamic carrier heating in quantum well lasers," Appl. Phys. Lett., vol. 70, pp. 808-810, Feb. 1997.
28. I. Suemune, L. A. Coldren, M. Yamanishi, and Y. Kan, "Extremely wide modulation bandwidth in a low threshold current strained quantum well laser," Appl. Phys. Lett., vol. 53, pp. 1378-1380, 1988.