Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers

Applied Physics Letters

Volumn 81, Issue 26, 2002, Pages 4904-4906

  Matthews, D R ^a   Summers, H D ^a   Smowton, P M ^a   Hopkinson, M ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FERMI LEVEL; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; WETTING;

GAIN-CURRENT CHARACTERISTICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037164784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532549     Document Type: Article

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