Self organization of nitride quantum dots by molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 330-334

  Daudin, B ^a   Widmann, F ^a   Feuillet, G ^a   Samson, Y ^a   Rouviere J L ^a   Pelekanos, N ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; OSTWALD RIPENING; QUANTUM CONFINEMENT EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033528909     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00377-8     Document Type: Article

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