Room-temperature operation of InAs quantum-dash lasers on InP (001)

IEEE Photonics Technology Letters

Volumn 13, Issue 8, 2001, Pages 767-769

  Wang, R H ^a   Stintz, A ^a   Varangis, P M ^a   Newell, T C ^a   Li, H ^a   Malloy, K J ^a   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

InAs; InP; Quantum dash; Quantum dot; Self as sembled; Semiconductor laser

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

QUANTUM-DASH LASERS;

QUANTUM WELL LASERS;

EID: 0035424150     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.935797     Document Type: Article

References (19)

1. The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
2. Low-threshold current density 1.3 μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
3. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
4. Low-threshold oxide-confined 1.3 μm quantum dot laser
5. Gain and linewidth enhancement factor in InAs quantum dot laser diodes
6. Low chirp observed in directly modulated quantum dot lasers
7. Low-threshold quantum dot lasers with 201 nm tuning range
8. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
9. Low threshold quantum dot injection laser emitting at 1.9 μm
10. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates
11. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
12. Initial stages of InAs epitaxy on vicinal GaAs (001) - (2 × 4)
13. Two-dimensional quantum-confined Stark effect in V-groove
14. Long-wavelength lasing from InAs self-assembled quantum dots on (311)B InP
15. Optical characteristics of 1.24 μm quantum dot lasers
16. High power AlGaInAs strained multiquantum well lasers operating at 1.52 μm