1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Electronics Letters

Volumn 40, Issue 22, 2004, Pages 1412-1413

  Sellers, I R ^a   Liu, H Y ^a   Groom, K M ^a   Childs, D T ^b   Robbins, D ^b   Badcock, T J ^a   Hopkinson, M ^a   Mowbray, D J ^a   Skolnick, M S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Bookham Technology plc   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTROLUMINESCENCE; MONOLAYERS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CLADDING LAYERS; GROUND STATE LASING; HIGH-REFLECTIVITY (HR) COATED FACETS; QUANTUM-DOT LASERS;

LASERS;

EID: 9144220371     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046692     Document Type: Article

References (10)

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