Carrier transport and recombination in p -doped and intrinsic 1.3 μm InAsGaAs quantum-dot lasers

Applied Physics Letters

Volumn 87, Issue 21, 2005, Pages 1-3

  Marko, I P ^a   Mass N F ^a   Sweeney, S J ^a   Andreev, A D ^a   Adams, A R ^a   Hatori, N ^b   Sugawara, M ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

CARRIER TRANSPORT; COMPLEX BEHAVIOR; RADIATIVE RECOMBINATION; THERMAL ESCAPE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27844532235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135204     Document Type: Article

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