InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C

Electronics Letters

Volumn 35, Issue 23, 1999, Pages 2036-2037

  Kamp, M ^a   Schmitt, M ^a   Hofmann, J ^a   Schafer F ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; WAVEGUIDES;

METAL GRATINGS; RIDGE WAVEGUIDE LASER; SIDEMODE SUPPRESSION; SINGLE LAYER; SINGLEMODE OPERATION; THRESHOLD CURRENTS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0033309397     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991352     Document Type: Article

References (9)

1. SHOJI, H., NAKATA, Y., MUKAI, K., SUGIYAMA, Y., SUGAWARA, M., YOKOYAMA, N., and ISHIKAWA, H.: 'Room temperature CW operation at the ground state of self-ordered quantum dot lasers with multi-stacked dot layer', Electron. Lett., 1996, 32, pp. 2023-2024
2. MAXIMOV, M.V., SHERNYAKOV, Y.M., TSATSUL'NIKOV, A.F., LUNEV, A.V., SAKHAROV, A.V., USTINOV, V.M., EGOROV, A.Y., ZHUKOV, A.E., KOVSH, A.R., KOP'EV, P.S., ASYRAN, L.V., ALFEROV, Z.I., LEDENTSOV, N.N., BIMBERG, D., KOSOGOV, A.O., and WERNER, P.: 'High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser', J. Appl. Phys., 1998, 83, pp. 5561-5563
3. HUFFAKER, D.L., PARK, G., ZOU, Z., SHCHEKIN, O.B., and DEPPE, D.G.: '1.3μm room-temperature GaAs-based quantum-dot laser', Appl. Phys. Lett., 1998, 73, pp. 2564-2566
4. SCHÄFER, F., REITHMAIER, J.P., and FORCHEL, A.: 'High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer', Appl. Phys. Lett., 1999, 74, pp. 2915-2917
5. HARRIS, L., MOWBRAY, D.J., SKOLNICK, M.S., HOPKINSON, M., and HILL, G.: 'Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers', Appl. Phys. Lett., 1998, 73, pp. 969-971
6. OSOWSKI, M.L., PANEPUCCI, R., ADESIDA, I., and COLEMAN, J.J.: 'A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition', IEEE Photonics Technol. Lett., 1997, 9, pp. 422-424
7. MATSUOKA, T.: 'Temperature range for DFB mode oscillation in 1.5 μm InGaAsP/InP DFB lasers', Jpn. J. Appl. Phys., 1986, 25, pp. 1206-1210
8. LU, H., BLAAUW, C., and MAKINO, T.: 'High-temperature single-mode operation of 1.3-μm strained MQW gain-coupled DFB lasers', IEEE Photonics Technol. Lett., 1995, 7, pp. 611-613
9. KAMP, M., HOFMANN, J., SCHÄFER, F., FORCHEL, A., and REITHMAIER, J.P.: 'Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers', Appl. Phys. Lett., 1999, 74, pp. 483-485