Room temperature lasing from InGaAs quantum dots

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1732-1734

  Mirin, R ^a   Gossard, A ^a   Bowers, J ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

Gallium indium arsenide; Semiconductor junction lasers; Semiconductor quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTS; ENERGY GAP; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

ROOM TEMPERATURE LASING; STATE FILLING; STRANSKI-KRASTANOW GROWTH TRANSITION;

SEMICONDUCTOR LASERS;

EID: 0030217389     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961147     Document Type: Article

References (8)

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