Growth and characterization of single quantum dots emitting at 1300 nm

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Alloing, B ^a   Zinoni, C ^a   Zwiller, V ^a   Li, L H ^a   Monat, C ^a   Gobet, M ^a   Buchs, G ^a   Fiore, A ^a,b   Pelucchi, E ^a   Kapon, E ^a  

^a Ecl Polytech Federale de Lausanne   (Switzerland)

^b Institute for Photonics and Nanotechnology   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM CRYPTOGRAPHY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DOT DENSITY; EXCITATION POWER DEPENDENCE; EXCITON-BIEXCITON BEHAVIOR; MICROPHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17944379630     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1872213     Document Type: Article

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