Molecular-beam epitaxial growth and characteristics of highly uniform InAs/GaAs quantum dot layers

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Mi, Zetian ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DOTS; BAND GAPS; TENSILE STRAIN; TRANSITION LINEWIDTHS;

CRYSTAL GROWTH; FREE ENERGY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR CRYSTALS; PHOTOLUMINESCENCE; RADIATION DETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 23844549295     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1985969     Document Type: Article

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